Band structure of holes in p-'DELTA'-doping superlattices (1994)
- Autores:
- Autores USP: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Editora: World Scientific
- Local: Vancouver
- Data de publicação: 1994
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: International Conference on the Physics of Semiconductors
-
ABNT
SIPAHI, Guilherme Matos et al. Band structure of holes in p-'DELTA'-doping superlattices. 1994, Anais.. Vancouver: World Scientific, 1994. . Acesso em: 20 abr. 2024. -
APA
Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Band structure of holes in p-'DELTA'-doping superlattices. In Proceedings. Vancouver: World Scientific. -
NLM
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 abr. 20 ] -
Vancouver
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 abr. 20 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
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