Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon (1994)
- Autores:
- Autores USP: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v.50, n.12, p.8699-705, 1994
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ABNT
SCOLFARO, L M R et al. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B, v. 50, n. 12, p. 8699-705, 1994Tradução . . Acesso em: 19 abr. 2024. -
APA
Scolfaro, L. M. R., Beliaev, D., Enderlein, R., & Leite, J. R. (1994). Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B, 50( 12), 8699-705. -
NLM
Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B. 1994 ;50( 12): 8699-705.[citado 2024 abr. 19 ] -
Vancouver
Scolfaro LMR, Beliaev D, Enderlein R, Leite JR. Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon. Physical Review B. 1994 ;50( 12): 8699-705.[citado 2024 abr. 19 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
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