Magnetic field -induced localization in a two-dimensional array of quantum dots (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Publisher: Francis Bitter National Magnetic Laboratory
- Publisher place: Cambridge
- Date published: 1994
- Source:
- Título do periódico: Proceedings
- Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics
-
ABNT
GUSEV, G M et al. Magnetic field -induced localization in a two-dimensional array of quantum dots. 1994, Anais.. Cambridge: Francis Bitter National Magnetic Laboratory, 1994. . Acesso em: 19 abr. 2024. -
APA
Gusev, G. M., Gennser, U., Kleber, X., Maude, D. K., Portal, J. C., Lubyshev, D. I., et al. (1994). Magnetic field -induced localization in a two-dimensional array of quantum dots. In Proceedings. Cambridge: Francis Bitter National Magnetic Laboratory. -
NLM
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Basmaji P. Magnetic field -induced localization in a two-dimensional array of quantum dots. Proceedings. 1994 ;[citado 2024 abr. 19 ] -
Vancouver
Gusev GM, Gennser U, Kleber X, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Basmaji P. Magnetic field -induced localization in a two-dimensional array of quantum dots. Proceedings. 1994 ;[citado 2024 abr. 19 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
