Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Physics: Condensed Matter
- Volume/Número/Paginação/Ano: v.6 , p.l265-72, 1994
-
ABNT
GUSEV, G M et al. Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample. Journal of Physics: Condensed Matter, v. 6 , p. l265-72, 1994Tradução . . Acesso em: 23 abr. 2024. -
APA
Gusev, G. M., Gennser, U., Maude, D. K., Portal, J. C., Lubyshev, D. I., Nastaushev, Y. V., et al. (1994). Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample. Journal of Physics: Condensed Matter, 6 , l265-72. -
NLM
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample. Journal of Physics: Condensed Matter. 1994 ;6 l265-72.[citado 2024 abr. 23 ] -
Vancouver
Gusev GM, Gennser U, Maude DK, Portal JC, Lubyshev DI, Nastaushev YV, Rossi JC, Basmaji P. Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample. Journal of Physics: Condensed Matter. 1994 ;6 l265-72.[citado 2024 abr. 23 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings
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