Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers (1993)
- Autores:
- Autores USP: LEITE, JOSE ROBERTO - IF ; HENRIQUES, ANDRE BOHOMOLETZ - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; SHIBLI, SUHAILA MALUF - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Editora: World Scientific
- Local: Singapura
- Data de publicação: 1993
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: International Conference on the Physics of Semiconductors
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ABNT
MENDONCA, C A C et al. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. 1993, Anais.. Singapura: World Scientific, 1993. . Acesso em: 19 abr. 2024. -
APA
Mendonca, C. A. C., Scolfaro, L. M. R., Henriques, A. B., Oliveira, J. B. B., Plentz, F., Shibli, S. M., et al. (1993). Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. In Proceedings. Singapura: World Scientific. -
NLM
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 abr. 19 ] -
Vancouver
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 abr. 19 ] - Hole confinement effects on multiple 'SI' 'DELTA' doping in 'GA''AS'
- Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy
- Transporte quantico por minibandas em super-redes semicondutoras dopadas
- Fermi surface study of spike doped 'GA''AS' superlattices
- Evidence of a two-dimensional to three-dimensional transition in 'SI' 'DELTA'-doped 'GA''AS' structures
- Electronic states of n-type 'DELTA'-doping in 'GA''AS' heterostructures
- Tuning of the two-dimensional electron density in modulation doped quantum wells by long wavelength radiation
- Tuning of the two-dimensional electron density in modulation-doped quantum wells by long-wavelength radiation
- Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
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