Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching (1992)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- Unidade: EP
- Subjects: SEMICONDUTORES; PLASMA (MICROELETRÔNICA); SILÍCIO
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Cbecimat: Anais
- Conference titles: Congresso Brasileiro de Engenharia e Ciencia dos Materiais
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ABNT
YAMAMOTO, R K et al. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. 1992, Anais.. Campinas: Unicamp, 1992. . Acesso em: 19 abr. 2024. -
APA
Yamamoto, R. K., Lopes, M. C. V., Akamine, C. T., Santos Filho, S. G. dos, & Hasenack, C. M. (1992). Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. In Cbecimat: Anais. Campinas: Unicamp. -
NLM
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. Cbecimat: Anais. 1992 ;[citado 2024 abr. 19 ] -
Vancouver
Yamamoto RK, Lopes MCV, Akamine CT, Santos Filho SG dos, Hasenack CM. Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching. Cbecimat: Anais. 1992 ;[citado 2024 abr. 19 ] - Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
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