Band structure and surface geometry of 'AL''AS' (110) (1992)
- Authors:
- Autor USP: FERRAZ, ARMANDO CORBANI - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapura
- Date published: 1992
- Source:
- Título do periódico: Brazilian School Semiconductor Physics, 5
-
ABNT
GROSSI, A C A S e ALVES, J L A e FERRAZ, A. C. Band structure and surface geometry of 'AL''AS' (110). Brazilian School Semiconductor Physics, 5. Tradução . Singapura: World Scientific, 1992. . . Acesso em: 19 abr. 2024. -
APA
Grossi, A. C. A. S., Alves, J. L. A., & Ferraz, A. C. (1992). Band structure and surface geometry of 'AL''AS' (110). In Brazilian School Semiconductor Physics, 5. Singapura: World Scientific. -
NLM
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 abr. 19 ] -
Vancouver
Grossi ACAS, Alves JLA, Ferraz AC. Band structure and surface geometry of 'AL''AS' (110). In: Brazilian School Semiconductor Physics, 5. Singapura: World Scientific; 1992. [citado 2024 abr. 19 ] - Atomic geometries of iii-v compound semiconductor surfaces by total energy and force methods
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- Estudo teorico da acao surfactante do 'TE' no crescimento de 'IN''AS': 'GA''AS'
- Ab initio study of the GaAs(001)-In(4 X 2) surface
- Oxygen adsorption on CdTe(110)
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