Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium (1990)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School on Semiconductors Physics
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 24 abr. 2024. -
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1990). Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. In . Singapure: World Scientific. -
NLM
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 abr. 24 ] -
Vancouver
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 abr. 24 ] - Impurezas substitucionais em silicio: serie de atomos 5d
- Estrutura eletronica dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Mecanismo de difusao em semicondutores
- Noble gas atoms as impurities in silicon
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Estrutura eletronica de impurezas de metais de transicao em diamante e germanio
- Modos locais de vibracao em 'GA''AS' intrinseco
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Substitutional impurities at reconstructed surfaces of cubic GaN
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