Noble gas atoms as impurities in silicon (1986)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Português
- Source:
- Título do periódico: International Journal of Quantum Chemistry. Symposium
- Volume/Número/Paginação/Ano: v.20, p.347-51, 1986
-
ABNT
CHACHAN, H et al. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium, v. 20, p. 347-51, 1986Tradução . . Acesso em: 17 abr. 2024. -
APA
Chachan, H., Alves, J. L. A., Siqueira, M. L., & Leite, J. R. (1986). Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium, 20, 347-51. -
NLM
Chachan H, Alves JLA, Siqueira ML, Leite JR. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium. 1986 ;20 347-51.[citado 2024 abr. 17 ] -
Vancouver
Chachan H, Alves JLA, Siqueira ML, Leite JR. Noble gas atoms as impurities in silicon. International Journal of Quantum Chemistry. Symposium. 1986 ;20 347-51.[citado 2024 abr. 17 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
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