Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P' (1985)
- Autores:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Idioma: Português
- Imprenta:
- Editora: Springer
- Local: San Francisco
- Data de publicação: 1985
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: International Conference on the Physics of Semiconductors
-
ABNT
SILVA, C E T G e MAKIUCHI, N e LEITE, J. R. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. 1985, Anais.. San Francisco: Springer, 1985. . Acesso em: 23 abr. 2024. -
APA
Silva, C. E. T. G., Makiuchi, N., & Leite, J. R. (1985). Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. In Proceedings. San Francisco: Springer. -
NLM
Silva CETG, Makiuchi N, Leite JR. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. Proceedings. 1985 ;[citado 2024 abr. 23 ] -
Vancouver
Silva CETG, Makiuchi N, Leite JR. Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'. Proceedings. 1985 ;[citado 2024 abr. 23 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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