Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon (1985)
- Autores:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MICROSCOPIA
- Idioma: Português
- Fonte:
- Título do periódico: Physical Review Letters
- Volume/Número/Paginação/Ano: v.55, p.980-2, 1985
-
ABNT
ASSALI, L. V. C. e LEITE, J. R. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters, v. 55, p. 980-2, 1985Tradução . . Acesso em: 18 abr. 2024. -
APA
Assali, L. V. C., & Leite, J. R. (1985). Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters, 55, 980-2. -
NLM
Assali LVC, Leite JR. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters. 1985 ;55 980-2.[citado 2024 abr. 18 ] -
Vancouver
Assali LVC, Leite JR. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters. 1985 ;55 980-2.[citado 2024 abr. 18 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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