Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures (2000)
Bellodi, Marcello; Iniguez, Benjamin; Raynaud, Cristine; Flandre, Denis 
; Martino, João Antonio
Fonte: SBMicro 2000: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BELLODI, Marcello et al. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.APA
Bellodi, M., Iniguez, B., Raynaud, C., Flandre, D., & Martino, J. A. (2000). Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.NLM
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]Vancouver
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
