TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs (2015)
Bühler, Rudolf Theoderich; Vincent, Benjamin; Witters, Liesbeth J; Favia, Paola; Eneman, Geert; Martino, João Antonio 
Fonte: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: NANOTECNOLOGIA
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BÜHLER, Rudolf Theoderich et al. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs. IEEE Transactions on Electron Devices, v. 62, n. 4, p. 1079-1084, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2015.2397441. Acesso em: 17 nov. 2025.APA
Bühler, R. T., Vincent, B., Witters, L. J., Favia, P., Eneman, G., & Martino, J. A. (2015). TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs. IEEE Transactions on Electron Devices, 62( 4), 1079-1084. doi:10.1109/ted.2015.2397441NLM
Bühler RT, Vincent B, Witters LJ, Favia P, Eneman G, Martino JA. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( 4): 1079-1084.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2015.2397441Vancouver
Bühler RT, Vincent B, Witters LJ, Favia P, Eneman G, Martino JA. TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( 4): 1079-1084.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2015.2397441
