ReP USP - Resultado da busca

Trabalho de evento
Thermally actuated MEMS all based on PECVD materials obtained at low temperature (2005)
Paez Carreño, Marcelo Nelson ; Rehder, Gustavo Pamplona
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAEZ CARREÑO, Marcelo Nelson e REHDER, Gustavo Pamplona. Thermally actuated MEMS all based on PECVD materials obtained at low temperature. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Paez Carreño, M. N., & Rehder, G. P. (2005). Thermally actuated MEMS all based on PECVD materials obtained at low temperature. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Paez Carreño MN, Rehder GP. Thermally actuated MEMS all based on PECVD materials obtained at low temperature. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Paez Carreño MN, Rehder GP. Thermally actuated MEMS all based on PECVD materials obtained at low temperature. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Porous silicon electrode modified with methylene blue (2005)
Cechelero, Gustavo Sampaio e Silva; Ramírez Fernandez, Francisco Javier ; Salcedo, Walter Jaimes
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CECHELERO, Gustavo Sampaio e Silva e RAMÍREZ FERNANDEZ, Francisco Javier e SALCEDO, Walter Jaimes. Porous silicon electrode modified with methylene blue. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Cechelero, G. S. e S., Ramírez Fernandez, F. J., & Salcedo, W. J. (2005). Porous silicon electrode modified with methylene blue. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Cechelero GS e S, Ramírez Fernandez FJ, Salcedo WJ. Porous silicon electrode modified with methylene blue. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Cechelero GS e S, Ramírez Fernandez FJ, Salcedo WJ. Porous silicon electrode modified with methylene blue. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs (2005)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
BELLODI, Marcello e MARTINO, João Antonio. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2005). Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Morphological image processing as a tool to analyse plasma etching of polymeric nanofibers (2005)
Calíope, Priscila Braga; Del Moral Hernandez, Emilio ; Silva, Ana Neilde Rodrigues da; Verdonck, Patrick Bernard
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CALÍOPE, Priscila Braga et al. Morphological image processing as a tool to analyse plasma etching of polymeric nanofibers. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Calíope, P. B., Del Moral Hernandez, E., Silva, A. N. R. da, & Verdonck, P. B. (2005). Morphological image processing as a tool to analyse plasma etching of polymeric nanofibers. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Calíope PB, Del Moral Hernandez E, Silva ANR da, Verdonck PB. Morphological image processing as a tool to analyse plasma etching of polymeric nanofibers. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Calíope PB, Del Moral Hernandez E, Silva ANR da, Verdonck PB. Morphological image processing as a tool to analyse plasma etching of polymeric nanofibers. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Analysis of the linear kink effect in partially depleted SOI nMOSFETs (2005)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
AGOPIAN, Paula Ghedini Der et al. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., & Claeys, C. (2005). Analysis of the linear kink effect in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Agopian PGD, Martino JA, Simoen E, Claeys C. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Agopian PGD, Martino JA, Simoen E, Claeys C. Analysis of the linear kink effect in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K (2005)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., & Claeys, C. (2005). Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET (2005)
Paiola, A.G.; Nicolett, Aparecido Sirley; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAIOLA, A.G. e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Paiola, A. G., Nicolett, A. S., & Martino, J. A. (2005). Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region (2005)
Almeida, Galba Falce de; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ALMEIDA, Galba Falce de e MARTINO, João Antonio. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Almeida, G. F. de, & Martino, J. A. (2005). A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Almeida GF de, Martino JA. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Almeida GF de, Martino JA. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
A simple method to model nonrectangular-gate layout in SOI MOSFETs (2005)
Giacomini, Renato Camargo; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple method to model nonrectangular-gate layout in SOI MOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Giacomini, R. C., & Martino, J. A. (2005). A simple method to model nonrectangular-gate layout in SOI MOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Integrated optical chemical sensor fabricated on silicon substrate (2005)
Siarkowski, Acácio Luiz; Morimoto, Nilton Itiro ; Baptista, Maurício da Silva ; Borges, Ben-Hur Viana
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidades: EP, IQ, EESC
Assunto: MICROELETRÔNICA
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ABNT
SIARKOWSKI, Acácio Luiz et al. Integrated optical chemical sensor fabricated on silicon substrate. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Siarkowski, A. L., Morimoto, N. I., Baptista, M. da S., & Borges, B. -H. V. (2005). Integrated optical chemical sensor fabricated on silicon substrate. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Siarkowski AL, Morimoto NI, Baptista M da S, Borges B-HV. Integrated optical chemical sensor fabricated on silicon substrate. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Siarkowski AL, Morimoto NI, Baptista M da S, Borges B-HV. Integrated optical chemical sensor fabricated on silicon substrate. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
SU-8 low contrast process for multi-level e-beam lithography (2005)
Catelli, R; Seabra, Antonio Carlos
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CATELLI, R e SEABRA, Antonio Carlos. SU-8 low contrast process for multi-level e-beam lithography. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Catelli, R., & Seabra, A. C. (2005). SU-8 low contrast process for multi-level e-beam lithography. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Catelli R, Seabra AC. SU-8 low contrast process for multi-level e-beam lithography. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Catelli R, Seabra AC. SU-8 low contrast process for multi-level e-beam lithography. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments (2005)
Pavanello, Marcelo Antonio ; Cerdeira, Antonio ; Martino, João Antonio ; Alemán, Miguel A; Flandre, Denis
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Pavanello, M. A., Cerdeira, A., Martino, J. A., Alemán, M. A., & Flandre, D. (2005). Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Cerdeira A, Martino JA, Alemán MA, Flandre D. Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Pavanello MA, Cerdeira A, Martino JA, Alemán MA, Flandre D. Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range (2005)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos et al. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., & Flandre, D. (2005). Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs (2005)
Galeti, Milene; Claeys, Cor ; Martino, João Antonio ; Simoen, Eddy
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GALETI, Milene et al. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Galeti, M., Claeys, C., Martino, J. A., & Simoen, E. (2005). Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Trabalho de evento
Determination of the ion density and electron temperature using a planar electrostatic probe (2005)
Swart, Laura; Verdonck, Patrick Bernard
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SWART, Laura e VERDONCK, Patrick Bernard. Determination of the ion density and electron temperature using a planar electrostatic probe. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 17 nov. 2025.
APA
Swart, L., & Verdonck, P. B. (2005). Determination of the ion density and electron temperature using a planar electrostatic probe. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Swart L, Verdonck PB. Determination of the ion density and electron temperature using a planar electrostatic probe. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]
Vancouver
Swart L, Verdonck PB. Determination of the ion density and electron temperature using a planar electrostatic probe. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 17 ]

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