ReP USP - Resultado da busca

Trabalho de evento
Polymeric corrugated membranes of PMMA fabricated by micro-casting technique for MOEMS and optical applications (2004)
Arashiro, Emerson Yasuyuki; Paez Carreño, Marcelo Nelson
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
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ABNT
ARASHIRO, Emerson Yasuyuki e PAEZ CARREÑO, Marcelo Nelson. Polymeric corrugated membranes of PMMA fabricated by micro-casting technique for MOEMS and optical applications. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Arashiro, E. Y., & Paez Carreño, M. N. (2004). Polymeric corrugated membranes of PMMA fabricated by micro-casting technique for MOEMS and optical applications. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Arashiro EY, Paez Carreño MN. Polymeric corrugated membranes of PMMA fabricated by micro-casting technique for MOEMS and optical applications. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Arashiro EY, Paez Carreño MN. Polymeric corrugated membranes of PMMA fabricated by micro-casting technique for MOEMS and optical applications. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Oxygen plasma etching mechanisms of resist (2004)
Verdonck, Patrick Bernard
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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ABNT
VERDONCK, Patrick Bernard. Oxygen plasma etching mechanisms of resist. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Verdonck, P. B. (2004). Oxygen plasma etching mechanisms of resist. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Verdonck PB. Oxygen plasma etching mechanisms of resist. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering (2004)
Mansano, Ronaldo Domingues ; Mousinho, Ana Paula; Zambom, Luís da Silva ; Medeiros, Marina Sparvoli de; Verdonck, Patrick Bernard; Guerino, M.; Massi, Marcos
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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ABNT
MANSANO, Ronaldo Domingues et al. The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Mansano, R. D., Mousinho, A. P., Zambom, L. da S., Medeiros, M. S. de, Verdonck, P. B., Guerino, M., & Massi, M. (2004). The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Mansano RD, Mousinho AP, Zambom L da S, Medeiros MS de, Verdonck PB, Guerino M, Massi M. The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Mansano RD, Mousinho AP, Zambom L da S, Medeiros MS de, Verdonck PB, Guerino M, Massi M. The influence of additives on electrical characteristics of DLC films deposited by reactive sputtering. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures (2004)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., & Claeys, C. (2004). Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. In Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C. Evaluation of the channel engineering impact on the analog performance of deep-submicrometer partially depleted SOI MOSFETS at low temperatures. Microelectronic Technology and Devices SBMicro 2004. Proceedings, v. 2003-9. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates (2004)
Araújo, Hugo Puertas de; Santos Filho, Sebastião Gomes dos ; Valle, Márcio de Almeida
Fonte: Microelectronics technology and devices SBMicro 2004.. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, ELETROQUÍMICA, FILMES FINOS
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ABNT
ARAÚJO, Hugo Puertas de e SANTOS FILHO, Sebastião Gomes dos e VALLE, Márcio de Almeida. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Araújo, H. P. de, Santos Filho, S. G. dos, & Valle, M. de A. (2004). Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society.
NLM
Araújo HP de, Santos Filho SG dos, Valle M de A. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Araújo HP de, Santos Filho SG dos, Valle M de A. Birefringence characterization of TiO2 thin films deposited by DC sputtering over tilted substrates. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure (2004)
Toquetti, Leandro Zeidan; Santos Filho, Sebastião Gomes dos ; Diniz, José A.; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
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ABNT
TOQUETTI, Leandro Zeidan et al. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Toquetti, L. Z., Santos Filho, S. G. dos, Diniz, J. A., & Swart, J. W. (2004). Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures (2004)
Pavanello, Marcelo Antonio ; Cerdeira, Antonio ; Martino, João Antonio ; Alemán, Miguel A; Flandre, Denis
Fonte: Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Cerdeira, A., Martino, J. A., Alemán, M. A., & Flandre, D. (2004). Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures. In Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Cerdeira A, Martino JA, Alemán MA, Flandre D. Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures. Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Cerdeira A, Martino JA, Alemán MA, Flandre D. Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures. Microelectronic technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Formation and stability of Ni(Pt)Si/Poly-Si layered structure (2004)
Santos, Regis E.; Doi, Ioshiaki; Teixeira, Ricardo C.; Diniz, José A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, ELETROQUÍMICA
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ABNT
SANTOS, Regis E. et al. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Santos, R. E., Doi, I., Teixeira, R. C., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2004). Formation and stability of Ni(Pt)Si/Poly-Si layered structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Formation of 3C-SIC films on silicon by thermal annealing process (2004)
Oliveira, Alessandro Ricardo de; Paez Carreño, Marcelo Nelson
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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ABNT
OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. Formation of 3C-SIC films on silicon by thermal annealing process. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2004). Formation of 3C-SIC films on silicon by thermal annealing process. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Oliveira AR de, Paez Carreño MN. Formation of 3C-SIC films on silicon by thermal annealing process. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Characterization of thin MOS gate oxides grown in pyrogenic environment (2004)
Nogueira, Willian Aurélio; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices SBMicro 2004.. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, CIRCUITOS INTEGRADOS MOS
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ABNT
NOGUEIRA, Willian Aurélio e SANTOS FILHO, Sebastião Gomes dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Nogueira, W. A., & Santos Filho, S. G. dos. (2004). Characterization of thin MOS gate oxides grown in pyrogenic environment. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society.
NLM
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures (2004)
Santos, Carolina Davanzzo Gomes dos; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis ; Raskin, Jean-Pierre
Fonte: Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SANTOS, Carolina Davanzzo Gomes dos et al. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Santos, C. D. G. dos, Pavanello, M. A., Martino, J. A., Flandre, D., & Raskin, J. -P. (2004). Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. In Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Santos CDG dos, Pavanello MA, Martino JA, Flandre D, Raskin J-P. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Santos CDG dos, Pavanello MA, Martino JA, Flandre D, Raskin J-P. Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures. Microelectronic technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabrication (2004)
Raimundo, Daniel Scodeler; Ramírez Fernandez, Francisco Javier ; Salcedo, Walter Jaimes
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
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ABNT
RAIMUNDO, Daniel Scodeler e RAMÍREZ FERNANDEZ, Francisco Javier e SALCEDO, Walter Jaimes. Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabrication. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Raimundo, D. S., Ramírez Fernandez, F. J., & Salcedo, W. J. (2004). Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabrication. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Raimundo DS, Ramírez Fernandez FJ, Salcedo WJ. Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabrication. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Raimundo DS, Ramírez Fernandez FJ, Salcedo WJ. Self-assembled polystyrene micro-spheres applied for photonic crystals and templates fabrication. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system (2004)
Teixeira, Ricardo C.; Doi, Ioshiaki; Swart, Jacobus Willibrordus; Zakia, M. B. P.; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
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ABNT
TEIXEIRA, Ricardo C. et al. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Teixeira, R. C., Doi, I., Swart, J. W., Zakia, M. B. P., & Santos Filho, S. G. dos. (2004). Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer (2004)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
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ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2004). Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
The influence of the AC component of the plasma potential on the measurement of the ion flux (2004)
Swart, Jacobus Willibrordus; Verdonck, Patrick Bernard
Fonte: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
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ABNT
SWART, Jacobus Willibrordus e VERDONCK, Patrick Bernard. The influence of the AC component of the plasma potential on the measurement of the ion flux. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Swart, J. W., & Verdonck, P. B. (2004). The influence of the AC component of the plasma potential on the measurement of the ion flux. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Trabalho de evento
Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures (2004)
Rocha, Otávio Filipe da; Morimoto, Nilton Itiro ; Viana, Carlos Eduardo; Gonçalves, L. C. D.
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: FILMES FINOS, ELETROQUÍMICA, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ROCHA, Otávio Filipe da et al. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.
APA
Rocha, O. F. da, Morimoto, N. I., Viana, C. E., & Gonçalves, L. C. D. (2004). Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]
Vancouver
Rocha OF da, Morimoto NI, Viana CE, Gonçalves LCD. Electrical characteristics of PECVD silicon oxide deposited with low TEOS contents at low temperatures. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 16 ]

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