ReP USP - Resultado da busca

Trabalho de evento
Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures (1999)
Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: ICMP 99 : Technical Digest. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., & Martino, J. A. (1999). Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS.
NLM
Pavanello MA, Martino JA. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. ICMP 99 : Technical Digest. 1999 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA. Extraction of the interface charge density at the silicon substrate interface in SOI MOSFET's at cryogenic temperatures. ICMP 99 : Technical Digest. 1999 ;[citado 2025 nov. 16 ]
Trabalho de evento
A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor (1998)
Sonnenberg, Victor ; Martino, João Antonio
Source: SBMicro'ICMP 98 : Proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (1998). A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC.
NLM
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Trabalho de evento
The influence of the back gate voltage on the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures (1998)
Bellodi, Marcello; Martino, João Antonio
Source: SBMicro'ICMP 98 : Proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The influence of the back gate voltage on the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 16 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (1998). The influence of the back gate voltage on the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC.
NLM
Bellodi M, Martino JA. The influence of the back gate voltage on the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Vancouver
Bellodi M, Martino JA. The influence of the back gate voltage on the leakage drain current in accumulation-mode SOI pMOSFETs at high-temperatures. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Trabalho de evento
Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes (1998)
Simões, Eliphas Wagner; Mansano, Ronaldo Domingues ; Furlan, Rogério ; Verdonck, Patrick Bernard
Source: XIII SBMicro-ICMP'98 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMÕES, Eliphas Wagner et al. Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes. 1998, Anais.. Curitiba: s. ed, 1998. . Acesso em: 16 nov. 2025.
APA
Simões, E. W., Mansano, R. D., Furlan, R., & Verdonck, P. B. (1998). Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes. In XIII SBMicro-ICMP'98 : proceedings. Curitiba: s. ed.
NLM
Simões EW, Mansano RD, Furlan R, Verdonck PB. Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes. XIII SBMicro-ICMP'98 : proceedings. 1998 ;[citado 2025 nov. 16 ]
Vancouver
Simões EW, Mansano RD, Furlan R, Verdonck PB. Microfluidic amplifiers fabricated in silicon using fluorine based plasma etching processes. XIII SBMicro-ICMP'98 : proceedings. 1998 ;[citado 2025 nov. 16 ]
Trabalho de evento
Effect of the substrate potential drop in accumulation-mode SOI pMOSFETs subthreshold slope (1998)
Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: SBMicro'ICMP 98 : Proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Effect of the substrate potential drop in accumulation-mode SOI pMOSFETs subthreshold slope. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., & Martino, J. A. (1998). Effect of the substrate potential drop in accumulation-mode SOI pMOSFETs subthreshold slope. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC.
NLM
Pavanello MA, Martino JA. Effect of the substrate potential drop in accumulation-mode SOI pMOSFETs subthreshold slope. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA. Effect of the substrate potential drop in accumulation-mode SOI pMOSFETs subthreshold slope. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Trabalho de evento
Optimization of the twin gate SOI MOSFET (1998)
Hoashi, P T; Martino, João Antonio
Source: SBMicro'ICMP 98 : Proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HOASHI, P T e MARTINO, João Antonio. Optimization of the twin gate SOI MOSFET. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 16 nov. 2025.
APA
Hoashi, P. T., & Martino, J. A. (1998). Optimization of the twin gate SOI MOSFET. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC.
NLM
Hoashi PT, Martino JA. Optimization of the twin gate SOI MOSFET. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]
Vancouver
Hoashi PT, Martino JA. Optimization of the twin gate SOI MOSFET. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 nov. 16 ]

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