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Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, Alexandre ; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Fonte: Materials Science and Engineering B. Nome do evento: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 13 nov. 2025. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 13 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 13 ]
Artigo de periodico
Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G M; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V; Baklanov, M R
Fonte: Materials Science and Engineering B. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BASMAJI, Pierre et al. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, v. 35, p. 322-4, 1995Tradução . . Acesso em: 13 nov. 2025.
APA
Basmaji, P., Gusev, G. M., Lubyshev, D. I., Silva, M. de A. P. da, Rossi, J. C., Nastaushev, Y. V., & Baklanov, M. R. (1995). Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, 35, 322-4.
NLM
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2025 nov. 13 ]
Vancouver
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2025 nov. 13 ]
Artigo de periodico
Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices (1995)
Pusep, Yuri A ; Silva, S W; Galzerani, J C; Lubyshev, D I; Basmaji, Pierre; Milekhin, A G; Preobrazhenskii, V V; Semyagin, B R; Marahovka, I I
Fonte: Materials Science and Engineering B. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, v. 35, p. 180-3, 1995Tradução . . Acesso em: 13 nov. 2025.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Basmaji, P., Milekhin, A. G., et al. (1995). Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, 35, 180-3.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2025 nov. 13 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2025 nov. 13 ]
Artigo de periodico
Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures (1995)
Guimarães, Francisco Eduardo Gontijo ; Lubyshev, D I; Chitta, Valmir Antonio ; Basmaji, Pierre
Fonte: Materials Science and Engineering B. Unidade: IFSC
Assuntos: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Materials Science and Engineering B, v. 35, p. 318-21, 1995Tradução . . Disponível em: https://doi.org/10.1016/0921-5107(95)01352-0. Acesso em: 13 nov. 2025.
APA
Guimarães, F. E. G., Lubyshev, D. I., Chitta, V. A., & Basmaji, P. (1995). Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures. Materials Science and Engineering B, 35, 318-21. doi:10.1016/0921-5107(95)01352-0
NLM
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures [Internet]. Materials Science and Engineering B. 1995 ;35 318-21.[citado 2025 nov. 13 ] Available from: https://doi.org/10.1016/0921-5107(95)01352-0
Vancouver
Guimarães FEG, Lubyshev DI, Chitta VA, Basmaji P. Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures [Internet]. Materials Science and Engineering B. 1995 ;35 318-21.[citado 2025 nov. 13 ] Available from: https://doi.org/10.1016/0921-5107(95)01352-0

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