Souza, Marcio Alves Sodré de; Doria, Rodrigo Trevisoli 
; Souza, Michelly de ; Martino, João Antonio ; Pavanello, Marcelo Antonio
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUZA, Marcio Alves Sodré de et al. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0077ecst. Acesso em: 08 out. 2025.APA
Souza, M. A. S. de, Doria, R. T., Souza, M. de, Martino, J. A., & Pavanello, M. A. (2012). Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0077ecstNLM
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0077ecstVancouver
Souza MAS de, Doria RT, Souza M de, Martino JA, Pavanello MA. Comparative study of biaxial and uniaxial mechanical stress influence on the low frequency noise of fully depleted SOI nMOSFETs operating in triode and saturation regime [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/04901.0077ecst
