Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots (2020)
Fonte: Physical Review Materials. Unidade: IF
Assuntos: FÍSICA DA MATÉRIA CONDENSADA, FÍSICA MODERNA, MICROSCOPIA DE FORÇA ATÔMICA, SUPERFÍCIES, ÍNDIO (ELEMENTO QUÍMICO), ARSÊNIO
ABNT
GAJJELA, R.S.R. et al. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, v. 4, n. 11, 2020Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.4.114601. Acesso em: 09 nov. 2025.APA
Gajjela, R. S. R., Hendriks, A. L., Cantalice, T. F., Quivy, A. A., & koenraad, P. (2020). Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots. Physical Review Materials, 4( 11). doi:10.1103/PhysRevMaterials.4.114601NLM
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601Vancouver
Gajjela RSR, Hendriks AL, Cantalice TF, Quivy AA, koenraad P. Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots [Internet]. Physical Review Materials. 2020 ; 4( 11):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.4.114601
