Filtros : "Journal of Applied Physics" "TEMPERATURA" Limpar

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  • Fonte: Journal of Applied Physics. Unidade: EP

    Assuntos: TEMPERATURA, RAIOS GAMA, FILMES FINOS

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    • ABNT

      SCHELL, Juliana et al. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations. Journal of Applied Physics, v. 121, n. 14, 2017Tradução . . Disponível em: https://doi.org/10.1063/1.4980168. Acesso em: 09 nov. 2025.
    • APA

      Schell, J., Lupascu, D. C., Carbonari, A. W., Mansano, R. D., Ribeiro Junior, I. S., Dang, T. T., et al. (2017). Ion implantation in titanium dioxide thin films studied by perturbed angular correlations. Journal of Applied Physics, 121( 14). doi:10.1063/1.4980168
    • NLM

      Schell J, Lupascu DC, Carbonari AW, Mansano RD, Ribeiro Junior IS, Dang TT, Anusca I, Trivedi HK, Johnston K, Vianden R. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations [Internet]. Journal of Applied Physics. 2017 ; 121( 14):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4980168
    • Vancouver

      Schell J, Lupascu DC, Carbonari AW, Mansano RD, Ribeiro Junior IS, Dang TT, Anusca I, Trivedi HK, Johnston K, Vianden R. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations [Internet]. Journal of Applied Physics. 2017 ; 121( 14):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4980168
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assuntos: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA

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    • ABNT

      MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 09 nov. 2025.
    • APA

      Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
    • NLM

      Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4779686
    • Vancouver

      Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4779686
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assuntos: FOTOLUMINESCÊNCIA, SEMICONDUTORES, GASES, TEMPERATURA

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    • ABNT

      TEODORO, M. D. et al. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, v. 103, n. 9, p. 093508-1-093508-7, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2913513. Acesso em: 09 nov. 2025.
    • APA

      Teodoro, M. D., Dias, I. F. L., Laureto, E., Duarte, J. L., Borrero, P. P. G., Lourenço, S. A., et al. (2008). Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, 103( 9), 093508-1-093508-7. doi:10.1063/1.2913513
    • NLM

      Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2913513
    • Vancouver

      Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2913513
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assuntos: CRISTALOGRAFIA FÍSICA, TEMPERATURA, DIFRAÇÃO POR RAIOS X, LASER

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    • ABNT

      JACINTO, Carlos et al. Thermal lens spectroscopy through phase transition in neodymium doped strontium barium niobate laser crystals. Journal of Applied Physics, v. 101, n. Ja 2007, p. 023113-1-023113-6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2430938. Acesso em: 09 nov. 2025.
    • APA

      Jacinto, C., Catunda, T., Jaque, D., García Solé, J., & Kaminskii, A. A. (2007). Thermal lens spectroscopy through phase transition in neodymium doped strontium barium niobate laser crystals. Journal of Applied Physics, 101( Ja 2007), 023113-1-023113-6. doi:10.1063/1.2430938
    • NLM

      Jacinto C, Catunda T, Jaque D, García Solé J, Kaminskii AA. Thermal lens spectroscopy through phase transition in neodymium doped strontium barium niobate laser crystals [Internet]. Journal of Applied Physics. 2007 ; 101( Ja 2007): 023113-1-023113-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2430938
    • Vancouver

      Jacinto C, Catunda T, Jaque D, García Solé J, Kaminskii AA. Thermal lens spectroscopy through phase transition in neodymium doped strontium barium niobate laser crystals [Internet]. Journal of Applied Physics. 2007 ; 101( Ja 2007): 023113-1-023113-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2430938
  • Fonte: Journal of Applied Physics. Unidade: IFSC

    Assuntos: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA

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    • ABNT

      FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 09 nov. 2025.
    • APA

      Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877
    • NLM

      Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
    • Vancouver

      Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
  • Fonte: Journal of Applied Physics. Nome do evento: Annual Conference on Magnetism and Magnetic Materials. Unidade: IFSC

    Assuntos: CRESCIMENTO DE CRISTAIS, TEMPERATURA

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    • ABNT

      ROCCO, Daniel Leandro et al. Magnetocaloric effect of 'La IND. 0.8''Sr IND. 0.2'Mn'O IND. 3' compound under pressure. Journal of Applied Physics. Melville: American Institute of Physics - AIP. . Acesso em: 09 nov. 2025. , 2005
    • APA

      Rocco, D. L., Silva, R. A., Carvalho, A. M. G., Coelho, A. A., Andreeta, J. P., & Gama, S. (2005). Magnetocaloric effect of 'La IND. 0.8''Sr IND. 0.2'Mn'O IND. 3' compound under pressure. Journal of Applied Physics. Melville: American Institute of Physics - AIP.
    • NLM

      Rocco DL, Silva RA, Carvalho AMG, Coelho AA, Andreeta JP, Gama S. Magnetocaloric effect of 'La IND. 0.8''Sr IND. 0.2'Mn'O IND. 3' compound under pressure. Journal of Applied Physics. 2005 ; 97( 10): 10M317-1-10M317-3.[citado 2025 nov. 09 ]
    • Vancouver

      Rocco DL, Silva RA, Carvalho AMG, Coelho AA, Andreeta JP, Gama S. Magnetocaloric effect of 'La IND. 0.8''Sr IND. 0.2'Mn'O IND. 3' compound under pressure. Journal of Applied Physics. 2005 ; 97( 10): 10M317-1-10M317-3.[citado 2025 nov. 09 ]

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