ReP USP - Resultado da busca

Artigo de periodico
Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices (2015)
Machado, Wanda Valle Marcondes; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco
Fonte: Journal of Applied Physics. Unidade: EP
Assuntos: ELETROMAGNETISMO, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MACHADO, Wanda Valle Marcondes e ASSALI, Lucy Vitoria Credidio e JUSTO FILHO, João Francisco. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, v. 118, n. 4, p. 045704, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4927293. Acesso em: 09 nov. 2025.
APA
Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2015). Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, 118( 4), 045704. doi:10.1063/1.4927293
NLM
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4927293
Vancouver
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4927293
Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo ; Kordesch, M. E.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4893654
Artigo de periodico
A simple-versatile approach to achieve all-Si-based optical micro-cavities (2013)
Gallo, I. B.; Zanatta, Antonio Ricardo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: FILMES FINOS, ÓPTICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALLO, I. B. e ZANATTA, Antonio Ricardo. A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, v. 113, n. 8, p. 083106-1-083106-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4793592. Acesso em: 09 nov. 2025.
APA
Gallo, I. B., & Zanatta, A. R. (2013). A simple-versatile approach to achieve all-Si-based optical micro-cavities. Journal of Applied Physics, 113( 8), 083106-1-083106-7. doi:10.1063/1.4793592
NLM
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4793592
Vancouver
Gallo IB, Zanatta AR. A simple-versatile approach to achieve all-Si-based optical micro-cavities [Internet]. Journal of Applied Physics. 2013 ; 113( 8): 083106-1-083106-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4793592
Artigo de periodico
Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films (2006)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo ; Chambouleyron, I.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA RAMAN, FILMES FINOS, SILÍCIO, NÍQUEL, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, v. No 2006, n. 9, p. 094311-1-094311-7, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2362877. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., Zanatta, A. R., & Chambouleyron, I. (2006). Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films. Journal of Applied Physics, No 2006( 9), 094311-1-094311-7. doi:10.1063/1.2362877
NLM
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
Vancouver
Ferri FA, Zanatta AR, Chambouleyron I. Metal-induced nanocrystalline structures in Ni-containing amorphous silicon thin films [Internet]. Journal of Applied Physics. 2006 ; No 2006( 9): 094311-1-094311-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2362877
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, v. 66, n. 5 , p. 2148-55, 1989Tradução . . Acesso em: 09 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, 66( 5 ), 2148-55.
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 09 ]
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 09 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343801. Acesso em: 09 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.343801
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.343801
Artigo de periodico
Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, v. 65, n. 12, p. 4884-90, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343203. Acesso em: 09 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, 65( 12), 4884-90. doi:10.1063/1.343203
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.343203
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.343203
Artigo de periodico
Effects of heavy boron doping upon oxygen precipitation in czochralski silicon (1988)
Hahn, S; Ponce, F A; Tiller, W A; Stojanoff, Vivian; Bulla, Douglas Anderson Pereira; Castro Junior, W E
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HAHN, S et al. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon. Journal of Applied Physics, v. 64, n. 9 , p. 4454-65, 1988Tradução . . Disponível em: https://doi.org/10.1063/1.341268. Acesso em: 09 nov. 2025.
APA
Hahn, S., Ponce, F. A., Tiller, W. A., Stojanoff, V., Bulla, D. A. P., & Castro Junior, W. E. (1988). Effects of heavy boron doping upon oxygen precipitation in czochralski silicon. Journal of Applied Physics, 64( 9 ), 4454-65. doi:10.1063/1.341268
NLM
Hahn S, Ponce FA, Tiller WA, Stojanoff V, Bulla DAP, Castro Junior WE. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon [Internet]. Journal of Applied Physics. 1988 ;64( 9 ): 4454-65.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.341268
Vancouver
Hahn S, Ponce FA, Tiller WA, Stojanoff V, Bulla DAP, Castro Junior WE. Effects of heavy boron doping upon oxygen precipitation in czochralski silicon [Internet]. Journal of Applied Physics. 1988 ;64( 9 ): 4454-65.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.341268

Unidades USP

ReP

Filtros

Autores

Ano de publicação

Assuntos