ReP USP - Resultado da busca

Filtros : "Christiano, Veronica" Limpar

Filtros

Trabalho de evento
Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy (2012)
Huanca, Danilo Roque ; Christiano, Veronica; Adelmann, Christoph; Kellerman, Guinther ; Verdonck, Patrick Bernard; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices, SBMicro. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque et al. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0383ecst. Acesso em: 02 dez. 2025.
APA
Huanca, D. R., Christiano, V., Adelmann, C., Kellerman, G., Verdonck, P. B., & Santos Filho, S. G. dos. (2012). Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0383ecst
NLM
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 dez. 02 ] Available from: https://doi.org/10.1149/04901.0383ecst
Vancouver
Huanca DR, Christiano V, Adelmann C, Kellerman G, Verdonck PB, Santos Filho SG dos. Hafnium aluminates deposited by atomic layer deposition: structural characterization by X-ray spectroscopy [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2025 dez. 02 ] Available from: https://doi.org/10.1149/04901.0383ecst
Artigo de periodico
Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films (2010)
Christiano, Veronica; Gozzi, Giuliano ; Sonnenberg, Victor ; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHRISTIANO, Veronica et al. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 333-340, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474177. Acesso em: 02 dez. 2025.
APA
Christiano, V., Gozzi, G., Sonnenberg, V., & Santos Filho, S. G. dos. (2010). Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 333-340. doi:10.1149/1.3474177
NLM
Christiano V, Gozzi G, Sonnenberg V, Santos Filho SG dos. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.[citado 2025 dez. 02 ] Available from: https://doi.org/10.1149/1.3474177
Vancouver
Christiano V, Gozzi G, Sonnenberg V, Santos Filho SG dos. Conductance modeling of High-k Al2O3 gate dielectrics prepared by oxidation of aluminum thin films [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 333-340.[citado 2025 dez. 02 ] Available from: https://doi.org/10.1149/1.3474177

Biblioteca Digital de Produção Intelectual da Universidade de São Paulo 2012 - 2025