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Trabalho de evento
Analog performance of dynamic threshold voltage SOI MOSFET (2008)
Amaro, Jefferson Oliveira; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
AMARO, Jefferson Oliveira e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Analog performance of dynamic threshold voltage SOI MOSFET. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Amaro, J. O., Agopian, P. G. D., & Martino, J. A. (2008). Analog performance of dynamic threshold voltage SOI MOSFET. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Amaro JO, Agopian PGD, Martino JA. Analog performance of dynamic threshold voltage SOI MOSFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Amaro JO, Agopian PGD, Martino JA. Analog performance of dynamic threshold voltage SOI MOSFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Halo optimization for 0.13 micron SOI CMOS technology (2008)
Agopian, Paula Ghedini Der ; Arrabaça, Julia Maria; Martino, João Antonio
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
AGOPIAN, Paula Ghedini Der e ARRABAÇA, Julia Maria e MARTINO, João Antonio. Halo optimization for 0.13 micron SOI CMOS technology. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Agopian, P. G. D., Arrabaça, J. M., & Martino, J. A. (2008). Halo optimization for 0.13 micron SOI CMOS technology. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Agopian PGD, Arrabaça JM, Martino JA. Halo optimization for 0.13 micron SOI CMOS technology. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Agopian PGD, Arrabaça JM, Martino JA. Halo optimization for 0.13 micron SOI CMOS technology. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces (2008)
Pinto, Diego Kops; Santos Filho, Sebastião Gomes dos
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PINTO, Diego Kops e SANTOS FILHO, Sebastião Gomes dos. Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956058. Acesso em: 02 jun. 2024.
APA
Pinto, D. K., & Santos Filho, S. G. dos. (2008). Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956058
NLM
Pinto DK, Santos Filho SG dos. Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956058
Vancouver
Pinto DK, Santos Filho SG dos. Local anodic oxidation induced by electric fields of MV/cm at AFM silicon nitride tips on silicon surfaces [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956058
Trabalho de evento
Corner effect on capacitance-voltage curves in triple gate FinFET (2008)
Rodrigues, Michele; Sonnenberg, Victor ; Martino, João Antonio
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RODRIGUES, Michele e SONNENBERG, Victor e MARTINO, João Antonio. Corner effect on capacitance-voltage curves in triple gate FinFET. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Rodrigues, M., Sonnenberg, V., & Martino, J. A. (2008). Corner effect on capacitance-voltage curves in triple gate FinFET. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Rodrigues M, Sonnenberg V, Martino JA. Corner effect on capacitance-voltage curves in triple gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Rodrigues M, Sonnenberg V, Martino JA. Corner effect on capacitance-voltage curves in triple gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Post-silicidation annealing effects on electrical and structural properties of NiPt germanosilicide (2008)
Eleotério, Marcos; Doi, Ioshiaki; Figueroa, Robinson; Diniz, José Alexandre; Santos Filho, Sebastião Gomes dos
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ELEOTÉRIO, Marcos et al. Post-silicidation annealing effects on electrical and structural properties of NiPt germanosilicide. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956053. Acesso em: 02 jun. 2024.
APA
Eleotério, M., Doi, I., Figueroa, R., Diniz, J. A., & Santos Filho, S. G. dos. (2008). Post-silicidation annealing effects on electrical and structural properties of NiPt germanosilicide. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956053
NLM
Eleotério M, Doi I, Figueroa R, Diniz JA, Santos Filho SG dos. Post-silicidation annealing effects on electrical and structural properties of NiPt germanosilicide [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956053
Vancouver
Eleotério M, Doi I, Figueroa R, Diniz JA, Santos Filho SG dos. Post-silicidation annealing effects on electrical and structural properties of NiPt germanosilicide [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956053
Trabalho de evento
Complete microfluidic system fabricated in glass substrates (2008)
Schianti, Juliana de Novais; Mielli, Murilo Zubioli; Lopes, Alexandre Tavares; Paez Carreño, Marcelo Nelson
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SCHIANTI, Juliana de Novais et al. Complete microfluidic system fabricated in glass substrates. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956016. Acesso em: 02 jun. 2024.
APA
Schianti, J. de N., Mielli, M. Z., Lopes, A. T., & Paez Carreño, M. N. (2008). Complete microfluidic system fabricated in glass substrates. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956016
NLM
Schianti J de N, Mielli MZ, Lopes AT, Paez Carreño MN. Complete microfluidic system fabricated in glass substrates [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956016
Vancouver
Schianti J de N, Mielli MZ, Lopes AT, Paez Carreño MN. Complete microfluidic system fabricated in glass substrates [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956016
Trabalho de evento
Piezoelectric stimulation of microcantilever beams for young's modulus determination of amorphous hydrogenated silicon carbide (2008)
Rehder, Gustavo Pamplona ; Paez Carreño, Marcelo Nelson
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
REHDER, Gustavo Pamplona e PAEZ CARREÑO, Marcelo Nelson. Piezoelectric stimulation of microcantilever beams for young's modulus determination of amorphous hydrogenated silicon carbide. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Rehder, G. P., & Paez Carreño, M. N. (2008). Piezoelectric stimulation of microcantilever beams for young's modulus determination of amorphous hydrogenated silicon carbide. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Rehder GP, Paez Carreño MN. Piezoelectric stimulation of microcantilever beams for young's modulus determination of amorphous hydrogenated silicon carbide. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Rehder GP, Paez Carreño MN. Piezoelectric stimulation of microcantilever beams for young's modulus determination of amorphous hydrogenated silicon carbide. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
An improved current model in saturation for trapezoidal finfets (2008)
Martins, Gustavo; Giacomini, Renato Camargo; Martino, João Antonio (orient.)
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARTINS, Gustavo e GIACOMINI, Renato Camargo. An improved current model in saturation for trapezoidal finfets. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Martins, G., & Giacomini, R. C. (2008). An improved current model in saturation for trapezoidal finfets. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs (2008)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita; Collaert, Nadine ; Claeys, Cor
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Rooyackers, R., Collaert, N., & Claeys, C. (2008). Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point (2008)
Camillo, Luciano Mendes; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CAMILLO, Luciano Mendes et al. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Camillo, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2008). Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering (2008)
Fraga, Mariana Amorim; Pessoa, Rodrigo S; Oliveira, Ivo C; Massi, Marcos; Maciel, Homero Santiago; Martinho, Herculano Silva; Santos Filho, Sebastião Gomes dos ; Marcuzzo, Jossano Saldanha
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
FRAGA, Mariana Amorim et al. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956052. Acesso em: 02 jun. 2024.
APA
Fraga, M. A., Pessoa, R. S., Oliveira, I. C., Massi, M., Maciel, H. S., Martinho, H. S., et al. (2008). Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956052
NLM
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956052
Vancouver
Fraga MA, Pessoa RS, Oliveira IC, Massi M, Maciel HS, Martinho HS, Santos Filho SG dos, Marcuzzo JS. Etching characteristics and surface morphology of nitrogen-doped a-SiC films prepared by RF magnetron sputtering [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956052
Trabalho de evento
Improved density of states and effective charge density in SI/PECVD Si/OxNy interface (2008)
Albertin, Katia Franklin ; Pereyra, Inés
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Albertin, K. F., & Pereyra, I. (2008). Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Photoluminescence in silicon-rich PECVD silicon oxynitride alloys (2008)
Ribeiro, M; Pereyra, Inés
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RIBEIRO, M e PEREYRA, Inés. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Ribeiro, M., & Pereyra, I. (2008). Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Ribeiro M, Pereyra I. Photoluminescence in silicon-rich PECVD silicon oxynitride alloys. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method (2008)
Cardoso, Juliana Lopes; Santos Filho, Sebastião Gomes dos ; Gozzi, Giuliano
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CARDOSO, Juliana Lopes e SANTOS FILHO, Sebastião Gomes dos e GOZZI, Giuliano. Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956061. Acesso em: 02 jun. 2024.
APA
Cardoso, J. L., Santos Filho, S. G. dos, & Gozzi, G. (2008). Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956061
NLM
Cardoso JL, Santos Filho SG dos, Gozzi G. Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956061
Vancouver
Cardoso JL, Santos Filho SG dos, Gozzi G. Fabrication and physical characterization of nickel nanowires formed by a template-based electrodeposition method [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956061
Trabalho de evento
Carriers mobility extraction methods for triple-gate FinFET (2008)
Santos, Carolina Davanzzo Gomes dos; Martino, João Antonio (orient.)
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SANTOS, Carolina Davanzzo Gomes dos. Carriers mobility extraction methods for triple-gate FinFET. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 02 jun. 2024.
APA
Santos, C. D. G. dos. (2008). Carriers mobility extraction methods for triple-gate FinFET. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Santos CDG dos. Carriers mobility extraction methods for triple-gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Vancouver
Santos CDG dos. Carriers mobility extraction methods for triple-gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ]
Trabalho de evento
Nanocomposite of porous silicon and methylene blue molecules for optical gas sensor application (2008)
Acosta, Aldo Aparicio; Raimundo, Daniel Scodeler; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
ACOSTA, Aldo Aparicio et al. Nanocomposite of porous silicon and methylene blue molecules for optical gas sensor application. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956017. Acesso em: 02 jun. 2024.
APA
Acosta, A. A., Raimundo, D. S., Huanca, D. R., & Salcedo, W. J. (2008). Nanocomposite of porous silicon and methylene blue molecules for optical gas sensor application. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956017
NLM
Acosta AA, Raimundo DS, Huanca DR, Salcedo WJ. Nanocomposite of porous silicon and methylene blue molecules for optical gas sensor application [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956017
Vancouver
Acosta AA, Raimundo DS, Huanca DR, Salcedo WJ. Nanocomposite of porous silicon and methylene blue molecules for optical gas sensor application [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956017
Trabalho de evento
Simulation of anisotropic etching of silicon using a cellular automata model (2008)
Oliveira Junior, Jose Pinto de; Paez Carreño, Marcelo Nelson
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
OLIVEIRA JUNIOR, Jose Pinto de e PAEZ CARREÑO, Marcelo Nelson. Simulation of anisotropic etching of silicon using a cellular automata model. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956015. Acesso em: 02 jun. 2024.
APA
Oliveira Junior, J. P. de, & Paez Carreño, M. N. (2008). Simulation of anisotropic etching of silicon using a cellular automata model. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956015
NLM
Oliveira Junior JP de, Paez Carreño MN. Simulation of anisotropic etching of silicon using a cellular automata model [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956015
Vancouver
Oliveira Junior JP de, Paez Carreño MN. Simulation of anisotropic etching of silicon using a cellular automata model [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956015
Trabalho de evento
Digital image analysis to determine diameters distribution of nanofibers (2008)
Calíope, Priscila Braga; Del Moral Hernandez, Emilio ; Silva, Ana Neilde Rodrigues da
Source: SBMICRO 2008: Anais. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CALÍOPE, Priscila Braga e DEL MORAL HERNANDEZ, Emilio e SILVA, Ana Neilde Rodrigues da. Digital image analysis to determine diameters distribution of nanofibers. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956064. Acesso em: 02 jun. 2024.
APA
Calíope, P. B., Del Moral Hernandez, E., & Silva, A. N. R. da. (2008). Digital image analysis to determine diameters distribution of nanofibers. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956064
NLM
Calíope PB, Del Moral Hernandez E, Silva ANR da. Digital image analysis to determine diameters distribution of nanofibers [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956064
Vancouver
Calíope PB, Del Moral Hernandez E, Silva ANR da. Digital image analysis to determine diameters distribution of nanofibers [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2956064
Trabalho de evento
Macroporous silicon structure functionalized by methylene blue to ph measurements application (2007)
Raimundo, Daniel Scodeler; Cechelero, Gustavo Sampaio e Silva; Acosta, Aldo Aparicio; Ramírez Fernandez, Francisco Javier ; Salcedo, Walter Jaimes
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
RAIMUNDO, Daniel Scodeler et al. Macroporous silicon structure functionalized by methylene blue to ph measurements application. 2007, Anais.. Pennington: The Electrochemical Society, 2007. Disponível em: https://doi.org/10.1149/1.2766932. Acesso em: 02 jun. 2024.
APA
Raimundo, D. S., Cechelero, G. S. e S., Acosta, A. A., Ramírez Fernandez, F. J., & Salcedo, W. J. (2007). Macroporous silicon structure functionalized by methylene blue to ph measurements application. In SBMicro 2007. Pennington: The Electrochemical Society. doi:10.1149/1.2766932
NLM
Raimundo DS, Cechelero GS e S, Acosta AA, Ramírez Fernandez FJ, Salcedo WJ. Macroporous silicon structure functionalized by methylene blue to ph measurements application [Internet]. SBMicro 2007. 2007 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2766932
Vancouver
Raimundo DS, Cechelero GS e S, Acosta AA, Ramírez Fernandez FJ, Salcedo WJ. Macroporous silicon structure functionalized by methylene blue to ph measurements application [Internet]. SBMicro 2007. 2007 ;[citado 2024 jun. 02 ] Available from: https://doi.org/10.1149/1.2766932
Trabalho de evento
Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields (2007)
Scaff, Robson; Fontes, Marcelo Bariatto Andrade; Santos Filho, Sebastião Gomes dos
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
SCAFF, Robson e FONTES, Marcelo Bariatto Andrade e SANTOS FILHO, Sebastião Gomes dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 02 jun. 2024.
APA
Scaff, R., Fontes, M. B. A., & Santos Filho, S. G. dos. (2007). Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Scaff R, Fontes MBA, Santos Filho SG dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. SBMicro 2007. 2007 ;[citado 2024 jun. 02 ]
Vancouver
Scaff R, Fontes MBA, Santos Filho SG dos. Characterization of a ISFET device as a ph sensor for applications in the industrial, environmental and biomedical fields. SBMicro 2007. 2007 ;[citado 2024 jun. 02 ]

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