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Filtros : "Journal of Applied Physics" "2024" Limpar

Filtros

Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Fonte: Journal of Applied Physics. Unidades: IFSC, IF
Assuntos: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 08 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Probabilistic modeling of energy transfer in disordered organic semiconductors (2024)
Valente, Gustavo Targino ; Guimarães, Francisco Eduardo Gontijo
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA, CÁLCULO DE PROBABILIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VALENTE, Gustavo Targino e GUIMARÃES, Francisco Eduardo Gontijo. Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, v. 136, n. 8, p. 084501-1-084501-8, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0218020. Acesso em: 08 nov. 2025.
APA
Valente, G. T., & Guimarães, F. E. G. (2024). Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, 136( 8), 084501-1-084501-8. doi:10.1063/5.0218020
NLM
Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0218020
Vancouver
Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0218020

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