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Artigo de periodico
On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon (2014)
Zanatta, Antonio Ricardo ; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
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ABNT
ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
NLM
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4893654
Vancouver
Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4893654
Artigo de periodico
Interband polarized absorption in InP polytypic superlattices (2014)
Faria Junior, P. E.; Campos, T.; Sipahi, Guilherme Matos
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POLARIZAÇÃO, ABSORÇÃO DA LUZ, FÍSICA COMPUTACIONAL
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ABNT
FARIA JUNIOR, P. E. e CAMPOS, T. e SIPAHI, Guilherme Matos. Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, v. 116, n. 19, p. 193501-1-193501-8, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4901209. Acesso em: 09 nov. 2025.
APA
Faria Junior, P. E., Campos, T., & Sipahi, G. M. (2014). Interband polarized absorption in InP polytypic superlattices. Journal of Applied Physics, 116( 19), 193501-1-193501-8. doi:10.1063/1.4901209
NLM
Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4901209
Vancouver
Faria Junior PE, Campos T, Sipahi GM. Interband polarized absorption in InP polytypic superlattices [Internet]. Journal of Applied Physics. 2014 ; 116( 19): 193501-1-193501-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4901209
Artigo de periodico
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 09 nov. 2025.
APA
Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
NLM
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4869218
Vancouver
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4869218
Artigo de periodico
Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides (2014)
Almeida, J. M. P.; Ferreira, P. H. D.; Manzani, Danilo ; Napoli, M.; Ribeiro, S. J. L.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ÓPTICA, NANOPARTÍCULAS, PRATA
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ABNT
ALMEIDA, J. M. P. et al. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, v. 115, n. 19, p. 193507-1-193507-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4875485. Acesso em: 09 nov. 2025.
APA
Almeida, J. M. P., Ferreira, P. H. D., Manzani, D., Napoli, M., Ribeiro, S. J. L., & Mendonça, C. R. (2014). Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, 115( 19), 193507-1-193507-5. doi:10.1063/1.4875485
NLM
Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4875485
Vancouver
Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4875485
Artigo de periodico
Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases (2014)
Zanatta, Antonio Ricardo ; Ingram, D. C.; Kordesch, M. E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NÍQUEL, SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, CRISTALIZAÇÃO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e INGRAM, D. C. e KORDESCH, M. E. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, v. 116, n. 12, p. 123508-1-123508-6, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4896589. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., Ingram, D. C., & Kordesch, M. E. (2014). Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases. Journal of Applied Physics, 116( 12), 123508-1-123508-6. doi:10.1063/1.4896589
NLM
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4896589
Vancouver
Zanatta AR, Ingram DC, Kordesch ME. Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases [Internet]. Journal of Applied Physics. 2014 ; 116( 12): 123508-1-123508-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4896589
Artigo de periodico
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains (2014)
Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Ware, M. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 09 nov. 2025.
APA
Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
NLM
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4902311
Vancouver
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4902311

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