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Artigo de periodico
Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy (2001)
Tribuzy, C V B; Butendeich, R; Pires, M P; Souza, P. L.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
TRIBUZY, C V B et al. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 90, n. 3, p. 1660-1662, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1382826. Acesso em: 09 nov. 2025.
APA
Tribuzy, C. V. B., Butendeich, R., Pires, M. P., Souza, P. L., & Henriques, A. B. (2001). Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 90( 3), 1660-1662. doi:10.1063/1.1382826
NLM
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1382826
Vancouver
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1382826
Artigo de periodico
Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' (2001)
Cruz, Gerson Kniphoff da; Carvalho, René Ayres de; Basso, Heitor Cury
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
CRUZ, Gerson Kniphoff da e CARVALHO, René Ayres de e BASSO, Heitor Cury. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5'. Journal of Applied Physics, v. 89, n. 4, p. 2194-2201, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1334373. Acesso em: 09 nov. 2025.
APA
Cruz, G. K. da, Carvalho, R. A. de, & Basso, H. C. (2001). Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5'. Journal of Applied Physics, 89( 4), 2194-2201. doi:10.1063/1.1334373
NLM
Cruz GK da, Carvalho RA de, Basso HC. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' [Internet]. Journal of Applied Physics. 2001 ;89( 4): 2194-2201.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1334373
Vancouver
Cruz GK da, Carvalho RA de, Basso HC. Energy assignments for the 'ANTPOT.4 I POT.15/2' and 'ANTPOT.4 S IND.3/2' multiplets of the 'Er POT.3+' ion in '('Er IND.0.05''Y IND.0.95') IND.2'BaZn'O IND.5' [Internet]. Journal of Applied Physics. 2001 ;89( 4): 2194-2201.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1334373
Artigo de periodico
Epitaxial pulsep laser crystallization of amorphous germanium on GaAs (2001)
Santos, P V; Trampert, A; Dondeo, F; Comedi, D; Zhu, H. J.; Ploog, K. H.; Zanatta, Antonio Ricardo ; Chambouleyron, I
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
SANTOS, P V et al. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs. Journal of Applied Physics, v. 90, n. 5, p. 2575-2581, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1390312. Acesso em: 09 nov. 2025.
APA
Santos, P. V., Trampert, A., Dondeo, F., Comedi, D., Zhu, H. J., Ploog, K. H., et al. (2001). Epitaxial pulsep laser crystallization of amorphous germanium on GaAs. Journal of Applied Physics, 90( 5), 2575-2581. doi:10.1063/1.1390312
NLM
Santos PV, Trampert A, Dondeo F, Comedi D, Zhu HJ, Ploog KH, Zanatta AR, Chambouleyron I. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2575-2581.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1390312
Vancouver
Santos PV, Trampert A, Dondeo F, Comedi D, Zhu HJ, Ploog KH, Zanatta AR, Chambouleyron I. Epitaxial pulsep laser crystallization of amorphous germanium on GaAs [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2575-2581.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1390312
Artigo de periodico
Impedance spectroscopy evidence of the phase separation in 'La IND. 0.3' 'Pr IND. 0.4' 'MnO IND.3' manganite (2001)
Souza, J A; Jardim, Renato de Figueiredo ; Muccillo, R; Muccillo, Eliana Navarro dos Santos ; Torikachvili, M S; Neumeier, J J
Source: Journal of Applied Physics. Unidade: IF
Subjects: MUDANÇA DE FASE, RESISTÊNCIA ELÉTRICA, MAGMATISMO, FERROMAGNETISMO
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ABNT
SOUZA, J A et al. Impedance spectroscopy evidence of the phase separation in 'La IND. 0.3' 'Pr IND. 0.4' 'MnO IND.3' manganite. Journal of Applied Physics, v. 89, n. 11, p. 6636-6638, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011006636000001&idtype=cvips=. Acesso em: 09 nov. 2025.
APA
Souza, J. A., Jardim, R. de F., Muccillo, R., Muccillo, E. N. dos S., Torikachvili, M. S., & Neumeier, J. J. (2001). Impedance spectroscopy evidence of the phase separation in 'La IND. 0.3' 'Pr IND. 0.4' 'MnO IND.3' manganite. Journal of Applied Physics, 89( 11), 6636-6638. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011006636000001&idtype=cvips=
NLM
Souza JA, Jardim R de F, Muccillo R, Muccillo EN dos S, Torikachvili MS, Neumeier JJ. Impedance spectroscopy evidence of the phase separation in 'La IND. 0.3' 'Pr IND. 0.4' 'MnO IND.3' manganite [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6636-6638.[citado 2025 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011006636000001&idtype=cvips=
Vancouver
Souza JA, Jardim R de F, Muccillo R, Muccillo EN dos S, Torikachvili MS, Neumeier JJ. Impedance spectroscopy evidence of the phase separation in 'La IND. 0.3' 'Pr IND. 0.4' 'MnO IND.3' manganite [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6636-6638.[citado 2025 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011006636000001&idtype=cvips=
Artigo de periodico
Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals (2001)
Mosquera, Luis; Oliveira, I; Frejlich, J; Hernandes, Antônio Carlos ; Lanfredi, Silvania; Carvalho, Jesiel Freitas
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
MOSQUERA, Luis et al. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals. Journal of Applied Physics, v. 90, n. 6, p. 2635-2641, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1390501. Acesso em: 09 nov. 2025.
APA
Mosquera, L., Oliveira, I., Frejlich, J., Hernandes, A. C., Lanfredi, S., & Carvalho, J. F. (2001). Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals. Journal of Applied Physics, 90( 6), 2635-2641. doi:10.1063/1.1390501
NLM
Mosquera L, Oliveira I, Frejlich J, Hernandes AC, Lanfredi S, Carvalho JF. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals [Internet]. Journal of Applied Physics. 2001 ;90( 6): 2635-2641.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1390501
Vancouver
Mosquera L, Oliveira I, Frejlich J, Hernandes AC, Lanfredi S, Carvalho JF. Dark conductivity, photoconductivity, and light-induced absorption in photorefractive sillenite crystals [Internet]. Journal of Applied Physics. 2001 ;90( 6): 2635-2641.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1390501
Artigo de periodico
Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films (2001)
Zanatta, Antonio Ricardo ; Ribeiro, C. T. M.; Freire Junior, F L
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e FREIRE JUNIOR, F L. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, v. 90, n. 5, p. 2321-2328, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1388568. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Freire Junior, F. L. (2001). Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films. Journal of Applied Physics, 90( 5), 2321-2328. doi:10.1063/1.1388568
NLM
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1388568
Vancouver
Zanatta AR, Ribeiro CTM, Freire Junior FL. Optoelectronic and structural properties of Er-doped sputter-deposited gallium-arsenic-nitrogen films [Internet]. Journal of Applied Physics. 2001 ;90( 5): 2321-2328.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1388568
Artigo de periodico
Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' (2001)
Hammer, P; Lacerda, R G; Valente, G M S; Santos, M C; Alvarez, F; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
HAMMER, P et al. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4'. Journal of Applied Physics, v. 89, n. 12 p.7852-7859, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1372371. Acesso em: 09 nov. 2025.
APA
Hammer, P., Lacerda, R. G., Valente, G. M. S., Santos, M. C., Alvarez, F., & Zanatta, A. R. (2001). Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4'. Journal of Applied Physics, 89( 12 p.7852-7859). doi:10.1063/1.1372371
NLM
Hammer P, Lacerda RG, Valente GMS, Santos MC, Alvarez F, Zanatta AR. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' [Internet]. Journal of Applied Physics. 2001 ;89( 12 p.7852-7859):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1372371
Vancouver
Hammer P, Lacerda RG, Valente GMS, Santos MC, Alvarez F, Zanatta AR. Structural properties of hydrogenated carbon-nitride films produced by ion-beam-assisted evaporation of the molecular precursor 'C IND.4''N IND.6''H IND.4' [Internet]. Journal of Applied Physics. 2001 ;89( 12 p.7852-7859):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1372371
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
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ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389336. Acesso em: 09 nov. 2025.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389336
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389336
Artigo de periodico
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures (2001)
Frey, T; As, D J; Bartels, M; Pawlis, A; Tabata, A; Fernandez, J R L; Silva, M T O; Leite, J. R.; Haug, C; Brenn, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
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ABNT
FREY, T et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, v. 89, n. 5, p. 2631-2634, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1345858. Acesso em: 09 nov. 2025.
APA
Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
NLM
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1345858
Vancouver
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1345858
Artigo de periodico
Magnetization and magnetoresistence in melt-spum 'Cu IND.80''Fe IND.5''Ni IND.15' (2001)
Martins, C S; Missell, Frank Patrick
Source: Journal of Applied Physics. Unidade: IF
Subjects: MAGNETISMO, MAGNETISMO (RESISTÊNCIA)
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ABNT
MARTINS, C S e MISSELL, Frank Patrick. Magnetization and magnetoresistence in melt-spum 'Cu IND.80''Fe IND.5''Ni IND.15'. Journal of Applied Physics, v. 89, n. 11, p. 7296-7298, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011007296000001&idtype=cvips. Acesso em: 09 nov. 2025.
APA
Martins, C. S., & Missell, F. P. (2001). Magnetization and magnetoresistence in melt-spum 'Cu IND.80''Fe IND.5''Ni IND.15'. Journal of Applied Physics, 89( 11), 7296-7298. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011007296000001&idtype=cvips
NLM
Martins CS, Missell FP. Magnetization and magnetoresistence in melt-spum 'Cu IND.80''Fe IND.5''Ni IND.15' [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 7296-7298.[citado 2025 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011007296000001&idtype=cvips
Vancouver
Martins CS, Missell FP. Magnetization and magnetoresistence in melt-spum 'Cu IND.80''Fe IND.5''Ni IND.15' [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 7296-7298.[citado 2025 nov. 09 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000089000011007296000001&idtype=cvips
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
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ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 09 nov. 2025.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1367875
Artigo de periodico
Iron-acceptor pairs in silicon: structure and formation processes (2001)
Zhao, Song; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco ; Gilmer, George H; Kimerling, Lionel C
Source: Journal of Applied Physics. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ELETROSTÁTICA, ELASTICIDADE
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ABNT
ZHAO, Song et al. Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, v. 90, n. 2744-2754, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389763. Acesso em: 09 nov. 2025.
APA
Zhao, S., Assali, L. V. C., Justo Filho, J. F., Gilmer, G. H., & Kimerling, L. C. (2001). Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, 90( 2744-2754). doi:10.1063/1.1389763
NLM
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389763
Vancouver
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389763
Artigo de periodico
Spectroscopy of 'Nd POT.3+' and 'Yb POT.3+' codoped fluoroindogallate glasses (2001)
Sousa, Dione Fagundes de; Batalioto, Fernando; Bell, Maria José Valenzuela; Oliveira, S. L.; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ESPECTROSCOPIA ÓPTICA, FÍSICA DA MATÉRIA CONDENSADA
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ABNT
SOUSA, Dione Fagundes de et al. Spectroscopy of 'Nd POT.3+' and 'Yb POT.3+' codoped fluoroindogallate glasses. Journal of Applied Physics, v. 90, n. 7, p. 3308-3313, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1397289. Acesso em: 09 nov. 2025.
APA
Sousa, D. F. de, Batalioto, F., Bell, M. J. V., Oliveira, S. L., & Nunes, L. A. de O. (2001). Spectroscopy of 'Nd POT.3+' and 'Yb POT.3+' codoped fluoroindogallate glasses. Journal of Applied Physics, 90( 7), 3308-3313. doi:10.1063/1.1397289
NLM
Sousa DF de, Batalioto F, Bell MJV, Oliveira SL, Nunes LA de O. Spectroscopy of 'Nd POT.3+' and 'Yb POT.3+' codoped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2001 ;90( 7): 3308-3313.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1397289
Vancouver
Sousa DF de, Batalioto F, Bell MJV, Oliveira SL, Nunes LA de O. Spectroscopy of 'Nd POT.3+' and 'Yb POT.3+' codoped fluoroindogallate glasses [Internet]. Journal of Applied Physics. 2001 ;90( 7): 3308-3313.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1397289

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