Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
ABNT
PUSEP, Yuri A. et al. Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1998, Anais.. Cannes: Instituto de Física de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 12 set. 2024.APA
Pusep, Y. A., Zanelatto, G., Galzerani, J. C., González-Borrero, P. P., & Basmaji, P. (1998). Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. In . Cannes: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Pusep YA, Zanelatto G, Galzerani JC, González-Borrero PP, Basmaji P. Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1998 ;[citado 2024 set. 12 ]Vancouver
Pusep YA, Zanelatto G, Galzerani JC, González-Borrero PP, Basmaji P. Kinetic modelling of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. 1998 ;[citado 2024 set. 12 ]