Source: Solid-State Electronics. Unidade: EP
Subjects: TEMPERATURA, MICROELETRÔNICA
ABNT
NICOLETTI, Talitha et al. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation. Solid-State Electronics, v. 91, p. 53-58, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.09.012. Acesso em: 30 set. 2024.APA
Nicoletti, T., Santos, S. D. dos, Martino, J. A., Aoulaiche, M., Veloso, A., Claeys, C., et al. (2014). Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation. Solid-State Electronics, 91, 53-58. doi:10.1016/j.sse.2013.09.012NLM
Nicoletti T, Santos SD dos, Martino JA, Aoulaiche M, Veloso A, Claeys C, Simoen E, Jurczak M. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation [Internet]. Solid-State Electronics. 2014 ; 91 53-58.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/j.sse.2013.09.012Vancouver
Nicoletti T, Santos SD dos, Martino JA, Aoulaiche M, Veloso A, Claeys C, Simoen E, Jurczak M. Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation [Internet]. Solid-State Electronics. 2014 ; 91 53-58.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/j.sse.2013.09.012