Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China (2020)
Fan, Y Y; Leite, Marco Aurelio Lisboa 
; Saito, G T
Source: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. Unidade: IF
Assunto: DIODOS
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FAN, Y Y e LEITE, Marco Aurelio Lisboa e SAITO, G T. Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, v. 984, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.nima.2020.164608. Acesso em: 18 nov. 2024.APA
Fan, Y. Y., Leite, M. A. L., & Saito, G. T. (2020). Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 984. doi:10.1016/j.nima.2020.164608NLM
Fan YY, Leite MAL, Saito GT. Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China [Internet]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2020 ; 984[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.nima.2020.164608Vancouver
Fan YY, Leite MAL, Saito GT. Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China [Internet]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2020 ; 984[citado 2024 nov. 18 ] Available from: https://doi.org/10.1016/j.nima.2020.164608
