Gallardo-Hernandez, S.; Martinez-Velis, I.; Ramirez-Lopez, M.; Lopez-Lopez, M.; Kudriatsev, Y.; Escobosa-Echavarria, A.; Morelhão, Sergio Luiz 
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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GALLARDO-HERNANDEZ, S. et al. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy. APPLIED PHYSICS LETTERS, v. no2013, n. 19, p. 192113, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4829922. Acesso em: 07 ago. 2024.APA
Gallardo-Hernandez, S., Martinez-Velis, I., Ramirez-Lopez, M., Lopez-Lopez, M., Kudriatsev, Y., Escobosa-Echavarria, A., & Morelhão, S. L. (2013). Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy. APPLIED PHYSICS LETTERS, no2013( 19), 192113. doi:10.1063/1.4829922NLM
Gallardo-Hernandez S, Martinez-Velis I, Ramirez-Lopez M, Lopez-Lopez M, Kudriatsev Y, Escobosa-Echavarria A, Morelhão SL. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy [Internet]. APPLIED PHYSICS LETTERS. 2013 ; no2013( 19): 192113.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.4829922Vancouver
Gallardo-Hernandez S, Martinez-Velis I, Ramirez-Lopez M, Lopez-Lopez M, Kudriatsev Y, Escobosa-Echavarria A, Morelhão SL. Self-assembly of compositionally modulated 'GA' IND. 1−x''MN' IND. x''AS' multilayers during molecular beam epitaxy [Internet]. APPLIED PHYSICS LETTERS. 2013 ; no2013( 19): 192113.[citado 2024 ago. 07 ] Available from: https://doi.org/10.1063/1.4829922
