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Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
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ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 19 nov. 2024.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/1.1812590
Trabalho de evento-resumo
Optical properties of cubic GaN with and without carbon doping (2003)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Brasil, M J S P; Soares, J A N T; Santos, A M; Noriega, O C; Leite, J. R.; As, D J; Köhler, U; Salazar, D G P; Schikora, D; Lischka, K
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada 26. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Optical properties of cubic GaN with and without carbon doping. 2003, Anais.. São Paulo: SBF, 2003. . Acesso em: 19 nov. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Brasil, M. J. S. P., Soares, J. A. N. T., Santos, A. M., et al. (2003). Optical properties of cubic GaN with and without carbon doping. In Resumos. São Paulo: SBF.
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Resumos. 2003 ;[citado 2024 nov. 19 ]
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Brasil MJSP, Soares JANT, Santos AM, Noriega OC, Leite JR, As DJ, Köhler U, Salazar DGP, Schikora D, Lischka K. Optical properties of cubic GaN with and without carbon doping. Resumos. 2003 ;[citado 2024 nov. 19 ]
Artigo de periodico
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates (2003)
Noriega, O C; Tabata, A; Soares, J A N T; Rodrigues, S C P; Leite, J. R.; Ribeiro, E; Fernandez, J R L; Meneses, E A; Cerdeira, F; As, D J; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
NORIEGA, O C et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, v. 252, n. 1-3, p. 208-212, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02517-4. Acesso em: 19 nov. 2024.
APA
Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
NLM
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Vancouver
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Artigo de periodico
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Cerdeira, F; Meneses, E A; Leite, J. R.; As, D J; Schikora, D; Lischka, K
Source: Solid State Communications. Unidade: IF
Subjects: FILMES FINOS, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. Solid State Communications, v. 125, n. 3-4, p. 205-208, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(02)00768-8. Acesso em: 19 nov. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Cerdeira, F., Meneses, E. A., Leite, J. R., et al. (2003). Near band-edge optical properties of cubic GaN. Solid State Communications, 125( 3-4), 205-208. doi:10.1016/s0038-1098(02)00768-8
NLM
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Artigo de periodico
Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
Tabata, A; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Kharchenko, A; Frey, T; As, D J; Schikora, D; Lischka, K; Furthmüller, J; Bechstedt, F
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN
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ABNT
TABATA, A et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, v. 80, n. 5, p. 769-771, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1436270. Acesso em: 19 nov. 2024.
APA
Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
NLM
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/1.1436270
Vancouver
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1063/1.1436270
Artigo de periodico
Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures (2002)
Husberg, O; Khartchenko, A; Vogelsang, H; As, D J; Lischka, K; Noriega, Odille Cue; Tabata, Americo; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS, MATERIAIS, FILMES FINOS
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ABNT
HUSBERG, O et al. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures. Physica E, v. 13, n. 2-4, p. 1090-1093, 2002Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00310-7. Acesso em: 19 nov. 2024.
APA
Husberg, O., Khartchenko, A., Vogelsang, H., As, D. J., Lischka, K., Noriega, O. C., et al. (2002). Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures. Physica E, 13( 2-4), 1090-1093. doi:10.1016/s1386-9477(02)00310-7
NLM
Husberg O, Khartchenko A, Vogelsang H, As DJ, Lischka K, Noriega OC, Tabata A, Scolfaro LMR, Leite JR. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures [Internet]. Physica E. 2002 ; 13( 2-4): 1090-1093.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s1386-9477(02)00310-7
Vancouver
Husberg O, Khartchenko A, Vogelsang H, As DJ, Lischka K, Noriega OC, Tabata A, Scolfaro LMR, Leite JR. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures [Internet]. Physica E. 2002 ; 13( 2-4): 1090-1093.[citado 2024 nov. 19 ] Available from: https://doi.org/10.1016/s1386-9477(02)00310-7
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, V A; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 19 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 nov. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 nov. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Trabalho de evento-resumo
Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells (2001)
Noriega, Odille Cue; Tabata, Americo; Chitta, V A; Sotomayor, N M; Fernandez, J R L; Leite, J. R.; Meneses, E A; Ribeiro, E; As, D J; Schikora, D; Lischka, K
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, SEMICONDUTORES
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ABNT
NORIEGA, Odille Cue et al. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 19 nov. 2024.
APA
Noriega, O. C., Tabata, A., Chitta, V. A., Sotomayor, N. M., Fernandez, J. R. L., Leite, J. R., et al. (2001). Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. In Resumos. São Paulo: SBF.
NLM
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 nov. 19 ]
Vancouver
Noriega OC, Tabata A, Chitta VA, Sotomayor NM, Fernandez JRL, Leite JR, Meneses EA, Ribeiro E, As DJ, Schikora D, Lischka K. Photoreflectance measurements on cubic GaN and GaN/InGaN quantum wells. Resumos. 2001 ;[citado 2024 nov. 19 ]
Artigo de periodico
MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties (2001)
As, D J; Frey, T; Barttls, M; Lischka, K; Goldhahn, R; Shokhovets, S; Tabata, A; Fernandez, J R L; Leite, J. R.
Source: Journal of Crstal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)
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ABNT
AS, D J et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, v. 230, n. 3-4, p. 421-425, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf. Acesso em: 19 nov. 2024.
APA
As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
NLM
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 nov. 19 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Vancouver
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 nov. 19 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Trabalho de evento
Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy (2000)
Fernandez, J R L; Tabata, A; Chitta, V A; As, D J; Frey, T; Noriega, O C; Silva, M T O; Abramof, E; Schikora, D; Lischka, K; Leite, J. R.
Source: Proceedings. Conference titles: International Workshop on Nitride Semiconductors. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 19 nov. 2024.
APA
Fernandez, J. R. L., Tabata, A., Chitta, V. A., As, D. J., Frey, T., Noriega, O. C., et al. (2000). Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP.
NLM
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 nov. 19 ]
Vancouver
Fernandez JRL, Tabata A, Chitta VA, As DJ, Frey T, Noriega OC, Silva MTO, Abramof E, Schikora D, Lischka K, Leite JR. Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy. Proceedings. 2000 ;[citado 2024 nov. 19 ]

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