Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor (2020)
Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IFAssunto: RADIAÇÃO IONIZANTE
ABNT
BÔAS, Alexis Cristiano Vilas et al. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor. 2020, Anais.. Piscataway, Nova Jersey, USA: Institute of Electrical and Electronics Engineers, 2020. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919340. Acesso em: 11 nov. 2024.APA
Bôas, A. C. V., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R. C., Medina, N. H., Seixas, L. E., et al. (2020). Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor. In . Piscataway, Nova Jersey, USA: Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919340NLM
Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Medina NH, Seixas LE, Palomo FR, Guazzelli MA. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919340Vancouver
Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Medina NH, Seixas LE, Palomo FR, Guazzelli MA. Assessment of Ionizing Radiation Hardness of a GaN Field-Effect Transistor [Internet]. 2020 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919340