Self-consistent band structure of GaAs-based heterostructures grown in 311-direction (2000)
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
SIPAHI, Guilherme Matos et al. Self-consistent band structure of GaAs-based heterostructures grown in 311-direction. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 19 abr. 2024.APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Leite, J. R. (2000). Self-consistent band structure of GaAs-based heterostructures grown in 311-direction. In Resumos. São Paulo: SBF.NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Leite JR. Self-consistent band structure of GaAs-based heterostructures grown in 311-direction. Resumos. 2000 ;[citado 2024 abr. 19 ]Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Leite JR. Self-consistent band structure of GaAs-based heterostructures grown in 311-direction. Resumos. 2000 ;[citado 2024 abr. 19 ]