A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/421/1/012005. Acesso em: 17 out. 2024. , 2013
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Fernandes, F. J. R., Valle, M. de A., et al. (2013). Effect of ethanol concentrations on few layer Schottky graphene transistors. Journal of Physics: Conference Series. Bristol: Instituto de Química, Universidade de São Paulo. doi:10.1088/1742-6596/421/1/012005
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 out. 17 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Fernandes FJR, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of ethanol concentrations on few layer Schottky graphene transistors [Internet]. Journal of Physics: Conference Series. 2013 ; 421 art. 012005 1-5.[citado 2024 out. 17 ] Available from: https://doi.org/10.1088/1742-6596/421/1/012005
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMEZ ARMAS, Luis Enrique et al. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. 2012, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat), 2012. . Acesso em: 17 out. 2024.
APA
Gomez Armas, L. E., Gonzalez Huila, M. F., Pojar, M., Peres, H. E. M., Ramírez Fernandez, F. J., Valle, M. de A., et al. (2012). Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. In Anais. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais (SBPMat).
NLM
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 out. 17 ]
Vancouver
Gomez Armas LE, Gonzalez Huila MF, Pojar M, Peres HEM, Ramírez Fernandez FJ, Valle M de A, Araki K, Toma HE, Santos AD dos, Seabra AC. Effect of gate voltage in few layer schottky graphene transistors at the presence of different ethanol concentrations. Anais. 2012 ;[citado 2024 out. 17 ]