Electronic structure of 'BE'-doped 'GA''AS' (1990)
Source: Materials Science Forum. Conference titles: International Conference on Shallon Impurities in Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
SCOLFARO, L M R et al. Electronic structure of 'BE'-doped 'GA''AS'. Materials Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 16 out. 2024. , 1990APA
Scolfaro, L. M. R., Menezes, E. A., Mendonca, C. A. C., Leite, J. R., & Martins, J. M. de V. (1990). Electronic structure of 'BE'-doped 'GA''AS'. Materials Science Forum. Instituto de Física, Universidade de São Paulo.NLM
Scolfaro LMR, Menezes EA, Mendonca CAC, Leite JR, Martins JM de V. Electronic structure of 'BE'-doped 'GA''AS'. Materials Science Forum. 1990 ;65-6 369-74.[citado 2024 out. 16 ]Vancouver
Scolfaro LMR, Menezes EA, Mendonca CAC, Leite JR, Martins JM de V. Electronic structure of 'BE'-doped 'GA''AS'. Materials Science Forum. 1990 ;65-6 369-74.[citado 2024 out. 16 ]