Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications (2002)
Source: Microelectronics Technology and Devices SBMICRO 2002. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
SANTOS, R.E. et al. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 28 ago. 2024.APA
Santos, R. E., Doi, I., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2002). Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.NLM
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 ago. 28 ]Vancouver
Santos RE, Doi I, Diniz JA, Swart JW, Santos Filho SG dos. Formation and characterization of the Ni(Pt)Si and NiSi for MOS devices applications. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2024 ago. 28 ]