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Trabalho de evento-resumo
InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE (2004)
Landi, S. M.; Pires, M. P.; Tribuzy, C. V.-B.; Souza, P. L.; Marega Júnior, Euclydes; Guimaraes, P. S. S.
Source: Program and Abstracts. Conference titles: The Internacional Conference on Superlattices, Nano-structures and Nano-devices - ICSNN. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
LANDI, S. M. et al. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. 2004, Anais.. Cancún: Instituto de Física de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 30 set. 2024.
APA
Landi, S. M., Pires, M. P., Tribuzy, C. V. -B., Souza, P. L., Marega Júnior, E., & Guimaraes, P. S. S. (2004). InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. In Program and Abstracts. Cancún: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Landi SM, Pires MP, Tribuzy CV-B, Souza PL, Marega Júnior E, Guimaraes PSS. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. Program and Abstracts. 2004 ;[citado 2024 set. 30 ]
Vancouver
Landi SM, Pires MP, Tribuzy CV-B, Souza PL, Marega Júnior E, Guimaraes PSS. InAs/InGaAs/InP structures for quantum dot infrared photodectors grown by MOVPE. Program and Abstracts. 2004 ;[citado 2024 set. 30 ]
Trabalho de evento-anais periodico
InAs quantum dots over InGaAs for infrared photodetectors (2004)
Pires, M. P.; Landi, S. M.; Tribuzy, C. V. B.; Nunes, Luiz Antônio de Oliveira; Marega Júnior, Euclydes; Souza, P. L.
Source: Journal of Crystal Growth. Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
PIRES, M. P. et al. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science. . Acesso em: 30 set. 2024. , 2004
APA
Pires, M. P., Landi, S. M., Tribuzy, C. V. B., Nunes, L. A. de O., Marega Júnior, E., & Souza, P. L. (2004). InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science.
NLM
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 set. 30 ]
Vancouver
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 set. 30 ]
Artigo de periodico
Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy (2001)
Tribuzy, C V B; Butendeich, R; Pires, M P; Souza, P. L.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
TRIBUZY, C V B et al. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 90, n. 3, p. 1660-1662, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1382826. Acesso em: 30 set. 2024.
APA
Tribuzy, C. V. B., Butendeich, R., Pires, M. P., Souza, P. L., & Henriques, A. B. (2001). Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 90( 3), 1660-1662. doi:10.1063/1.1382826
NLM
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2024 set. 30 ] Available from: https://doi.org/10.1063/1.1382826
Vancouver
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2024 set. 30 ] Available from: https://doi.org/10.1063/1.1382826
Artigo de periodico
Delta-doping superlattices in multiple quantum wells (2001)
Tribuzy, C V B; Souza, P. L.; Landi, S M; Pires, M P; Butendeich, R; Bittencourt, A C; Marques, G E; Henriques, André Bohomoletz
Source: Physica E. Unidade: IF
Subjects: MATÉRIA CONDENSADA (ESTRUTURA;PROPRIEDADES MECÂNICAS;PROPRIEDADES TÉRMICAS), MATÉRIA CONDENSADA (ESTRUTURA;PROPRIEDADES ELÉTRICAS), MATERIAIS (PROPRIEDADES FÍSICAS), SUPERFÍCIE FÍSICA, FENÔMENO DE TRANSPORTE, MATERIAIS (PROPRIEDADES ELÉTRICAS)
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ABNT
TRIBUZY, C V B et al. Delta-doping superlattices in multiple quantum wells. Physica E, v. 11, n. 2-3, p. 261-267, 2001Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(01)00215-6. Acesso em: 30 set. 2024.
APA
Tribuzy, C. V. B., Souza, P. L., Landi, S. M., Pires, M. P., Butendeich, R., Bittencourt, A. C., et al. (2001). Delta-doping superlattices in multiple quantum wells. Physica E, 11( 2-3), 261-267. doi:10.1016/s1386-9477(01)00215-6
NLM
Tribuzy CVB, Souza PL, Landi SM, Pires MP, Butendeich R, Bittencourt AC, Marques GE, Henriques AB. Delta-doping superlattices in multiple quantum wells [Internet]. Physica E. 2001 ; 11( 2-3): 261-267.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s1386-9477(01)00215-6
Vancouver
Tribuzy CVB, Souza PL, Landi SM, Pires MP, Butendeich R, Bittencourt AC, Marques GE, Henriques AB. Delta-doping superlattices in multiple quantum wells [Internet]. Physica E. 2001 ; 11( 2-3): 261-267.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s1386-9477(01)00215-6
Artigo de periodico
Electronic scattering in doped superlattices (2001)
Henriques, André Bohomoletz; Souza, P. L.; Yavich, B
Source: Physical Review B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA, FILMES FINOS
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ABNT
HENRIQUES, André Bohomoletz e SOUZA, P. L. e YAVICH, B. Electronic scattering in doped superlattices. Physical Review B, v. 64, n. 4, p. 5319/1-5319/6, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Souza, P. L., & Yavich, B. (2001). Electronic scattering in doped superlattices. Physical Review B, 64( 4), 5319/1-5319/6. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
NLM
Henriques AB, Souza PL, Yavich B. Electronic scattering in doped superlattices [Internet]. Physical Review B. 2001 ; 64( 4): 5319/1-5319/6.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
Vancouver
Henriques AB, Souza PL, Yavich B. Electronic scattering in doped superlattices [Internet]. Physical Review B. 2001 ; 64( 4): 5319/1-5319/6.[citado 2024 set. 30 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000004045319000001&idtype=cvips
Artigo de periodico
Anisotropy of the cyclotron mass in superlattices containing two populated minibands (2001)
Henriques, André Bohomoletz; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
HENRIQUES, André Bohomoletz e SOUZA, P. L. e YAVICH, B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, v. 16, n. 1, p. 1-6, 2001Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/16/1/301. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Souza, P. L., & Yavich, B. (2001). Anisotropy of the cyclotron mass in superlattices containing two populated minibands. Semiconductor Science and Technology, 16( 1), 1-6. doi:10.1088/0268-1242/16/1/301
NLM
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2024 set. 30 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301
Vancouver
Henriques AB, Souza PL, Yavich B. Anisotropy of the cyclotron mass in superlattices containing two populated minibands [Internet]. Semiconductor Science and Technology. 2001 ; 16( 1): 1-6.[citado 2024 set. 30 ] Available from: https://doi.org/10.1088/0268-1242/16/1/301
Artigo de periodico
Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices (2001)
Henriques, André Bohomoletz; Oliveira, R. F.; Souza, P. L.; Yavich, B.
Source: Physica B. Unidade: IF
Assunto: FÍSICA
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ABNT
HENRIQUES, André Bohomoletz et al. Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices. Physica B, v. 298, n. 1-4, p. 320-323, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v298i1-4&article=320_motsiis&form=pdf&file=file.pdf. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Oliveira, R. F., Souza, P. L., & Yavich, B. (2001). Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices. Physica B, 298( 1-4), 320-323. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v298i1-4&article=320_motsiis&form=pdf&file=file.pdf
NLM
Henriques AB, Oliveira RF, Souza PL, Yavich B. Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices [Internet]. Physica B. 2001 ; 298( 1-4): 320-323.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v298i1-4&article=320_motsiis&form=pdf&file=file.pdf
Vancouver
Henriques AB, Oliveira RF, Souza PL, Yavich B. Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices [Internet]. Physica B. 2001 ; 298( 1-4): 320-323.[citado 2024 set. 30 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=09214526&issue=v298i1-4&article=320_motsiis&form=pdf&file=file.pdf
Artigo de periodico
Obervation of densely populated Tamm states in modulation-doped superlattices (2000)
Henriques, André Bohomoletz; Hanamoto, L K; Souza, P. L.; Yavich, B
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
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ABNT
HENRIQUES, André Bohomoletz et al. Obervation of densely populated Tamm states in modulation-doped superlattices. Physical Review B, v. 61, n. 20, p. R13369-R13372, 2000Tradução . . Disponível em: https://doi.org/10.1103/physrevb.61.r13369. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Hanamoto, L. K., Souza, P. L., & Yavich, B. (2000). Obervation of densely populated Tamm states in modulation-doped superlattices. Physical Review B, 61( 20), R13369-R13372. doi:10.1103/physrevb.61.r13369
NLM
Henriques AB, Hanamoto LK, Souza PL, Yavich B. Obervation of densely populated Tamm states in modulation-doped superlattices [Internet]. Physical Review B. 2000 ; 61( 20): R13369-R13372.[citado 2024 set. 30 ] Available from: https://doi.org/10.1103/physrevb.61.r13369
Vancouver
Henriques AB, Hanamoto LK, Souza PL, Yavich B. Obervation of densely populated Tamm states in modulation-doped superlattices [Internet]. Physical Review B. 2000 ; 61( 20): R13369-R13372.[citado 2024 set. 30 ] Available from: https://doi.org/10.1103/physrevb.61.r13369
Artigo de periodico
High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices (1999)
Henriques, André Bohomoletz; Hanamoto, L. K.; Oliveira, R. F.; Souza, P. L.; Gonçalves, L. C. D.; Yavich, B.
Source: Brazilian Journal of Physics. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
HENRIQUES, André Bohomoletz et al. High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices. Brazilian Journal of Physics, v. 29, n. 4, p. 707-710, 1999Tradução . . Disponível em: https://doi.org/10.1590/s0103-97331999000400017. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Hanamoto, L. K., Oliveira, R. F., Souza, P. L., Gonçalves, L. C. D., & Yavich, B. (1999). High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices. Brazilian Journal of Physics, 29( 4), 707-710. doi:10.1590/s0103-97331999000400017
NLM
Henriques AB, Hanamoto LK, Oliveira RF, Souza PL, Gonçalves LCD, Yavich B. High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 707-710.[citado 2024 set. 30 ] Available from: https://doi.org/10.1590/s0103-97331999000400017
Vancouver
Henriques AB, Hanamoto LK, Oliveira RF, Souza PL, Gonçalves LCD, Yavich B. High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 1999 ; 29( 4): 707-710.[citado 2024 set. 30 ] Available from: https://doi.org/10.1590/s0103-97331999000400017
Artigo de periodico
Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE (1999)
Henriques, André Bohomoletz; Hanamoto, L. K.; Oliveira, R. F.; Souza, P. L.; Gonçalves, L. C. D.; Yavich, B.
Source: Physica B. Unidade: IF
Subjects: FÍSICA, INTERFACE
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ABNT
HENRIQUES, André Bohomoletz et al. Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE. Physica B, v. 273-274, p. 835-838, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-4526(99)00516-5. Acesso em: 30 set. 2024.
APA
Henriques, A. B., Hanamoto, L. K., Oliveira, R. F., Souza, P. L., Gonçalves, L. C. D., & Yavich, B. (1999). Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE. Physica B, 273-274, 835-838. doi:10.1016/s0921-4526(99)00516-5
NLM
Henriques AB, Hanamoto LK, Oliveira RF, Souza PL, Gonçalves LCD, Yavich B. Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE [Internet]. Physica B. 1999 ; 273-274 835-838.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0921-4526(99)00516-5
Vancouver
Henriques AB, Hanamoto LK, Oliveira RF, Souza PL, Gonçalves LCD, Yavich B. Structural and electronic properties of doped InP/InGaAs short period superlattices grown by LP-MOVPE [Internet]. Physica B. 1999 ; 273-274 835-838.[citado 2024 set. 30 ] Available from: https://doi.org/10.1016/s0921-4526(99)00516-5
Artigo de periodico
Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE (1998)
Pereira, R G; Yavich, B; Gonçalves, L. C. D.; Souza, P. L.; Henriques, André Bohomoletz
Source: Electronics Letters. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
PEREIRA, R G et al. Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE. Electronics Letters, v. 34, n. 22, p. 2173-2174, 1998Tradução . . Disponível em: https://doi.org/10.1049/el:19981251. Acesso em: 30 set. 2024.
APA
Pereira, R. G., Yavich, B., Gonçalves, L. C. D., Souza, P. L., & Henriques, A. B. (1998). Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE. Electronics Letters, 34( 22), 2173-2174. doi:10.1049/el:19981251
NLM
Pereira RG, Yavich B, Gonçalves LCD, Souza PL, Henriques AB. Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE [Internet]. Electronics Letters. 1998 ; 34( 22): 2173-2174.[citado 2024 set. 30 ] Available from: https://doi.org/10.1049/el:19981251
Vancouver
Pereira RG, Yavich B, Gonçalves LCD, Souza PL, Henriques AB. Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE [Internet]. Electronics Letters. 1998 ; 34( 22): 2173-2174.[citado 2024 set. 30 ] Available from: https://doi.org/10.1049/el:19981251
Trabalho de evento-anais periodico
Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy (1998)
Souza, P. L.; Yavich, B; Pamplona-Pires, M; Henriques, André Bohomoletz; Gonçalves, L. C. D.
Source: Radiation Effects and Defect in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Semiconductors. Unidade: IF
Subjects: FÍSICA, FÍSICA NUCLEAR
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ABNT
SOUZA, P. L. et al. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers. . Acesso em: 30 set. 2024. , 1998
APA
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1998). Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers.
NLM
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 81-97.[citado 2024 set. 30 ]
Vancouver
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Si 'delta'-doping superlattices in InP grown by low-pressuremetalorganic vapor phase epitaxy. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 81-97.[citado 2024 set. 30 ]
Artigo de periodico
Magnetic quantum effects in degenerate superlattices (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Souza, P. L.; Yavich, B
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz et al. Magnetic quantum effects in degenerate superlattices. Brazilian Journal of Physics, v. 27/A, n. 4, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Souza, P. L., & Yavich, B. (1997). Magnetic quantum effects in degenerate superlattices. Brazilian Journal of Physics, 27/A( 4).
NLM
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Magnetic quantum effects in degenerate superlattices. Brazilian Journal of Physics. 1997 ; 27/A( 4):[citado 2024 set. 30 ]
Vancouver
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Magnetic quantum effects in degenerate superlattices. Brazilian Journal of Physics. 1997 ; 27/A( 4):[citado 2024 set. 30 ]
Artigo de periodico
Ionized impurity scattering in periodically 'delta'-doped InP (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Oliveira Jr., N. F.; Souza, P. L.; Yavich, B
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
HENRIQUES, André Bohomoletz et al. Ionized impurity scattering in periodically 'delta'-doped InP. Physical Review B, v. 55, n. 19, p. 13072-13079, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Oliveira Jr., N. F., Souza, P. L., & Yavich, B. (1997). Ionized impurity scattering in periodically 'delta'-doped InP. Physical Review B, 55( 19), 13072-13079.
NLM
Henriques AB, Gonçalves LCD, Oliveira Jr. NF, Souza PL, Yavich B. Ionized impurity scattering in periodically 'delta'-doped InP. Physical Review B. 1997 ; 55( 19): 13072-13079.[citado 2024 set. 30 ]
Vancouver
Henriques AB, Gonçalves LCD, Oliveira Jr. NF, Souza PL, Yavich B. Ionized impurity scattering in periodically 'delta'-doped InP. Physical Review B. 1997 ; 55( 19): 13072-13079.[citado 2024 set. 30 ]
Artigo de periodico
Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors (1997)
Henriques, André Bohomoletz; Gancalves, L C D; Souza, P. L.; Yavich, B
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
HENRIQUES, André Bohomoletz et al. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics, v. 27/A, n. 4, p. 215-218, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gancalves, L. C. D., Souza, P. L., & Yavich, B. (1997). Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics, 27/A( 4), 215-218.
NLM
Henriques AB, Gancalves LCD, Souza PL, Yavich B. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics. 1997 ; 27/A( 4): 215-218.[citado 2024 set. 30 ]
Vancouver
Henriques AB, Gancalves LCD, Souza PL, Yavich B. Capacitance-Voltage profiling of periodically 'gama'-doped semiconductors. Brazilian Journal of Physics. 1997 ; 27/A( 4): 215-218.[citado 2024 set. 30 ]
Artigo de periodico
Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy (1997)
Souza, P. L.; Yavich, B; Pamplona-Pires, M; Henriques, André Bohomoletz; Gonçalves, L. C. D.
Source: Journal of Applied Physics. Unidade: IF
Assunto: ELETRÔNICA
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ABNT
SOUZA, P. L. et al. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 82, n. 4, p. 1700-1705, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 82( 4), 1700-1705.
NLM
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2024 set. 30 ]
Vancouver
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2024 set. 30 ]
Artigo de periodico
Photoluminescence and mobility of single and periodically Si 'delta' - doped InP growth by LP-MOVPE (1997)
Yavich, B; Souza, P. L.; Pamplona-Pires, M; Henriques, André Bohomoletz; Gonçalves, L. C. D.
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
YAVICH, B et al. Photoluminescence and mobility of single and periodically Si 'delta' - doped InP growth by LP-MOVPE. Brazilian Journal of Physics, v. 27A, n. 4, p. 189-193, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Yavich, B., Souza, P. L., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Photoluminescence and mobility of single and periodically Si 'delta' - doped InP growth by LP-MOVPE. Brazilian Journal of Physics, 27A( 4), 189-193.
NLM
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Photoluminescence and mobility of single and periodically Si 'delta' - doped InP growth by LP-MOVPE. Brazilian Journal of Physics. 1997 ; 27A( 4): 189-193.[citado 2024 set. 30 ]
Vancouver
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Photoluminescence and mobility of single and periodically Si 'delta' - doped InP growth by LP-MOVPE. Brazilian Journal of Physics. 1997 ; 27A( 4): 189-193.[citado 2024 set. 30 ]
Artigo de periodico
Single and periodically Si Delta-doped Inp grown by Lp-movpe (1997)
Yavich, B; Souza, P. L.; Pamplona-Pires, M; Henriques, André Bohomoletz; Gonçalves, L. C. D.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
YAVICH, B et al. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, v. 12, p. 481-484, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Yavich, B., Souza, P. L., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, 12, 481-484.
NLM
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2024 set. 30 ]
Vancouver
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2024 set. 30 ]
Artigo de periodico
Quantum transport in periodically 'delta'-doped GaAs (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Oliveira Jr., N. F.; Shibli, Suhaila Maluf; Souza, P. L.; Yavich, B
Source: Zeitschrift für Physik B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Quantum transport in periodically 'delta'-doped GaAs. Zeitschrift für Physik B, v. 104, p. 457-461, 1997Tradução . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Oliveira Jr., N. F., Shibli, S. M., Souza, P. L., & Yavich, B. (1997). Quantum transport in periodically 'delta'-doped GaAs. Zeitschrift für Physik B, 104, 457-461.
NLM
Henriques AB, Gonçalves LCD, Oliveira Jr. NF, Shibli SM, Souza PL, Yavich B. Quantum transport in periodically 'delta'-doped GaAs. Zeitschrift für Physik B. 1997 ; 104 457-461.[citado 2024 set. 30 ]
Vancouver
Henriques AB, Gonçalves LCD, Oliveira Jr. NF, Shibli SM, Souza PL, Yavich B. Quantum transport in periodically 'delta'-doped GaAs. Zeitschrift für Physik B. 1997 ; 104 457-461.[citado 2024 set. 30 ]
Parte de monografia/livro
Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields (1997)
Henriques, André Bohomoletz; Gonçalves, L. C. D.; Bindilatti, V.; Oliveira Júnior, Honorato Faustino de; Souza, P. L.; Yavich, B
Source: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Tradução . Singapore: World Scientific, 1997. . . Acesso em: 30 set. 2024.
APA
Henriques, A. B., Gonçalves, L. C. D., Bindilatti, V., Oliveira Júnior, H. F. de, Souza, P. L., & Yavich, B. (1997). Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific.
NLM
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 30 ]
Vancouver
Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 set. 30 ]

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