Device model for poly(o-methoxyaniline) field-effect transistor (2005)
Source: Journal of Polymer Science B. Unidades: EP, IFSC
Assunto: POLÍMEROS (MATERIAIS)
ABNT
BIANCHI, Rodrigo Fernando e ONMORI, Roberto Koji e FARIA, Roberto Mendonça. Device model for poly(o-methoxyaniline) field-effect transistor. Journal of Polymer Science B, v. 43, n. Ja 2005, p. 74-78, 2005Tradução . . Disponível em: https://doi.org/10.1002/polb.20298. Acesso em: 23 ago. 2024.APA
Bianchi, R. F., Onmori, R. K., & Faria, R. M. (2005). Device model for poly(o-methoxyaniline) field-effect transistor. Journal of Polymer Science B, 43( Ja 2005), 74-78. doi:10.1002/polb.20298NLM
Bianchi RF, Onmori RK, Faria RM. Device model for poly(o-methoxyaniline) field-effect transistor [Internet]. Journal of Polymer Science B. 2005 ; 43( Ja 2005): 74-78.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1002/polb.20298Vancouver
Bianchi RF, Onmori RK, Faria RM. Device model for poly(o-methoxyaniline) field-effect transistor [Internet]. Journal of Polymer Science B. 2005 ; 43( Ja 2005): 74-78.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1002/polb.20298