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Artigo de periodico
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures (2018)
Martino, Márcio Dalla Valle; Claeys, Cor ; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Simoen, Eddy ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINO, Márcio Dalla Valle et al. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, v. 33, n. 7, p. 075012, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aac4fd. Acesso em: 11 nov. 2024.
APA
Martino, M. D. V., Claeys, C., Agopian, P. G. D., Rooyackers, R., Simoen, E., & Martino, J. A. (2018). Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, 33( 7), 075012. doi:10.1088/1361-6641/aac4fd
NLM
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Vancouver
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Artigo de periodico
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018)
Caparroz, Luís Felipe Vicentis; Agopian, Paula Ghedini Der ; Claeys, Cor ; Simoen, Eddy ; Bordallo, Caio Cesar Mendes ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidades: EP, EACH
Subjects: TEMPERATURA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAPARROZ, Luís Felipe Vicentis et al. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, v. 33, n. 6, p. 065003, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aabab3. Acesso em: 11 nov. 2024.
APA
Caparroz, L. F. V., Agopian, P. G. D., Claeys, C., Simoen, E., Bordallo, C. C. M., & Martino, J. A. (2018). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, 33( 6), 065003. doi:10.1088/1361-6641/aabab3
NLM
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Vancouver
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Artigo de periodico
The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
Bordallo, Caio Cesar Mendes ; Mocuta, Dan; Collaert, Nadine ; Alian, A; Simoen, Eddy ; Claeys, Cor ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Mols, Yannick; Van Dooren, A; Verhulst, Anne S; Lin, D
Source: Composants nanoélectroniques. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 11 nov. 2024.
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 11 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 11 ] Available from: https://doi.org/10.21494/iste.op.2018.0224

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