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Trabalho de evento-resumo
Traditional conjugated polymer as efficient mixed conductors for high-performing electrochemical transistors (2018)
Cavassin, Priscila; Faria, Gregório Couto
Source: Abstracts. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC
Subjects: TRANSISTORES, POLÍMEROS (MATERIAIS), SEMICONDUTORES
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ABNT
CAVASSIN, Priscila e FARIA, Gregório Couto. Traditional conjugated polymer as efficient mixed conductors for high-performing electrochemical transistors. 2018, Anais.. Warrendale: Materials Research Society - MRS, 2018. Disponível em: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/bm07/bm07_05_113/bm07_05_11_157. Acesso em: 11 nov. 2024.
APA
Cavassin, P., & Faria, G. C. (2018). Traditional conjugated polymer as efficient mixed conductors for high-performing electrochemical transistors. In Abstracts. Warrendale: Materials Research Society - MRS. Recuperado de https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/bm07/bm07_05_113/bm07_05_11_157
NLM
Cavassin P, Faria GC. Traditional conjugated polymer as efficient mixed conductors for high-performing electrochemical transistors [Internet]. Abstracts. 2018 ;[citado 2024 nov. 11 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/bm07/bm07_05_113/bm07_05_11_157
Vancouver
Cavassin P, Faria GC. Traditional conjugated polymer as efficient mixed conductors for high-performing electrochemical transistors [Internet]. Abstracts. 2018 ;[citado 2024 nov. 11 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/bm07/bm07_05_113/bm07_05_11_157
Artigo de periodico
A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory (2018)
Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme Matos ; Silva, Juarez Lopes Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
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BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 11 nov. 2024.
APA
Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
NLM
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5018325
Vancouver
Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5018325
Artigo de periodico
Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method (2018)
Campos, Tiago; Faria Junior, Paulo E.; Gmitra, Martin; Sipahi, Guilherme Matos ; Fabian, Jaroslav
Source: Physical Review B. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, SPINTRÔNICA, MATERIAIS NANOESTRUTURADOS
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CAMPOS, Tiago et al. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method. Physical Review B, v. 97, n. 24, p. 245402-1-245402-18, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.97.245402. Acesso em: 11 nov. 2024.
APA
Campos, T., Faria Junior, P. E., Gmitra, M., Sipahi, G. M., & Fabian, J. (2018). Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method. Physical Review B, 97( 24), 245402-1-245402-18. doi:10.1103/PhysRevB.97.245402
NLM
Campos T, Faria Junior PE, Gmitra M, Sipahi GM, Fabian J. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method [Internet]. Physical Review B. 2018 ; 97( 24): 245402-1-245402-18.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.97.245402
Vancouver
Campos T, Faria Junior PE, Gmitra M, Sipahi GM, Fabian J. Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: realistic calculations with multiband k·p method [Internet]. Physical Review B. 2018 ; 97( 24): 245402-1-245402-18.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.97.245402
Artigo de periodico
Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules (2018)
Pander, Piotr; Etherington, Marc K.; Monkman, Andrew P.; Motyka, Radoslaw; Zassowski, Pawel; Varsano, Daniele; Data, Przemyslaw; Silva, Tales José da; Caldas, Marília Junqueira
Source: Journal of Physical Chemistry C. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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PANDER, Piotr et al. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules. Journal of Physical Chemistry C, v. 122, n. 42, p. 23934-23942, 2018Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.8b07510. Acesso em: 11 nov. 2024.
APA
Pander, P., Etherington, M. K., Monkman, A. P., Motyka, R., Zassowski, P., Varsano, D., et al. (2018). Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules. Journal of Physical Chemistry C, 122( 42), 23934-23942. doi:10.1021/acs.jpcc.8b07510
NLM
Pander P, Etherington MK, Monkman AP, Motyka R, Zassowski P, Varsano D, Data P, Silva TJ da, Caldas MJ. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 42): 23934-23942.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1021/acs.jpcc.8b07510
Vancouver
Pander P, Etherington MK, Monkman AP, Motyka R, Zassowski P, Varsano D, Data P, Silva TJ da, Caldas MJ. Thermally activated delayed fluorescence mediated through the upper triplet state manifold in non-charge-transfer star-shaped triphenylamine–carbazole molecules [Internet]. Journal of Physical Chemistry C. 2018 ; 122( 42): 23934-23942.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1021/acs.jpcc.8b07510
Artigo de periodico
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures (2018)
Martino, Márcio Dalla Valle; Claeys, Cor ; Agopian, Paula Ghedini Der ; Rooyackers, Rita; Simoen, Eddy ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: SEMICONDUTORES
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MARTINO, Márcio Dalla Valle et al. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, v. 33, n. 7, p. 075012, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aac4fd. Acesso em: 11 nov. 2024.
APA
Martino, M. D. V., Claeys, C., Agopian, P. G. D., Rooyackers, R., Simoen, E., & Martino, J. A. (2018). Performance of differential pair circuits designed with line tunnel FET devices at different temperatures. Semiconductor Science and Technology, 33( 7), 075012. doi:10.1088/1361-6641/aac4fd
NLM
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Vancouver
Martino MDV, Claeys C, Agopian PGD, Rooyackers R, Simoen E, Martino JA. Performance of differential pair circuits designed with line tunnel FET devices at different temperatures [Internet]. Semiconductor Science and Technology. 2018 ; 33( 7): 075012.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aac4fd
Parte de monografia/livro
Semiconductor spin-lasers (2018)
Žutić, Igor; Lee, Jeongsu; Gøthgen, Christian; Faria Junior, Paulo E.; Xu, Gaofeng; Sipahi, Guilherme Matos ; Gerhardt, Nils C.
Source: Nanoscale spintronics and applications. Unidade: IFSC
Subjects: SPIN, LASER, SEMICONDUTORES
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ŽUTIĆ, Igor et al. Semiconductor spin-lasers. Nanoscale spintronics and applications. Tradução . Boca Raton: CRC Press, 2018. p. 565 . Disponível em: https://doi.org/10.1201/9780429423079. Acesso em: 11 nov. 2024.
APA
Žutić, I., Lee, J., Gøthgen, C., Faria Junior, P. E., Xu, G., Sipahi, G. M., & Gerhardt, N. C. (2018). Semiconductor spin-lasers. In Nanoscale spintronics and applications (p. 565 ). Boca Raton: CRC Press. doi:10.1201/9780429423079
NLM
Žutić I, Lee J, Gøthgen C, Faria Junior PE, Xu G, Sipahi GM, Gerhardt NC. Semiconductor spin-lasers [Internet]. In: Nanoscale spintronics and applications. Boca Raton: CRC Press; 2018. p. 565 .[citado 2024 nov. 11 ] Available from: https://doi.org/10.1201/9780429423079
Vancouver
Žutić I, Lee J, Gøthgen C, Faria Junior PE, Xu G, Sipahi GM, Gerhardt NC. Semiconductor spin-lasers [Internet]. In: Nanoscale spintronics and applications. Boca Raton: CRC Press; 2018. p. 565 .[citado 2024 nov. 11 ] Available from: https://doi.org/10.1201/9780429423079
Trabalho de evento-resumo
Ultrafast spin lasers (2018)
Xu, Gaofeng; Faria Junior, Paulo E.; Lee, Jeongsu; Gerhardt, Nils C.; Sipahi, Guilherme Matos ; Zutic, Igor
Source: Abstracts. Conference titles: Optics and Photonics. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, SPINTRÔNICA
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ABNT
XU, Gaofeng et al. Ultrafast spin lasers. 2018, Anais.. Bellingham: International Society for Optical Engineering - SPIE, 2018. . Acesso em: 11 nov. 2024.
APA
Xu, G., Faria Junior, P. E., Lee, J., Gerhardt, N. C., Sipahi, G. M., & Zutic, I. (2018). Ultrafast spin lasers. In Abstracts. Bellingham: International Society for Optical Engineering - SPIE.
NLM
Xu G, Faria Junior PE, Lee J, Gerhardt NC, Sipahi GM, Zutic I. Ultrafast spin lasers. Abstracts. 2018 ;[citado 2024 nov. 11 ]
Vancouver
Xu G, Faria Junior PE, Lee J, Gerhardt NC, Sipahi GM, Zutic I. Ultrafast spin lasers. Abstracts. 2018 ;[citado 2024 nov. 11 ]
Artigo de periodico
Novel near field detector for three-dimensional X-ray diffraction microscopy (2018)
Annett, Scott; Kycia, Stefan; Dale, Darren; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
ANNETT, Scott et al. Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, v. 3, n. ju 2018, p. 2341-2346, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.487. Acesso em: 11 nov. 2024.
APA
Annett, S., Kycia, S., Dale, D., & Morelhao, S. L. (2018). Novel near field detector for three-dimensional X-ray diffraction microscopy. MRS Advances, 3( ju 2018), 2341-2346. doi:10.1557/adv.2018.487
NLM
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1557/adv.2018.487
Vancouver
Annett S, Kycia S, Dale D, Morelhao SL. Novel near field detector for three-dimensional X-ray diffraction microscopy [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2341-2346.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1557/adv.2018.487
Trabalho de evento-resumo
On the visible-light photoelectrochemical activity of double-walled TiO2 nanotubes obtained by anodization in ionic liquids (2018)
Wender, Heberton; Gonçalves, Renato Vitalino ; Feil, Adriano; Migowski, Pedro; Dupont, Jairton; Teixeira, Sérgio
Source: Abstracts. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC
Subjects: SEMICONDUTORES, CONVERSÃO DE ENERGIA ELÉTRICA, FOTOCATÁLISE
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ABNT
WENDER, Heberton et al. On the visible-light photoelectrochemical activity of double-walled TiO2 nanotubes obtained by anodization in ionic liquids. 2018, Anais.. Warrendale: Materials Research Society - MRS, 2018. Disponível em: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/nm03/nm03_05_27/nm03_05_01_28. Acesso em: 11 nov. 2024.
APA
Wender, H., Gonçalves, R. V., Feil, A., Migowski, P., Dupont, J., & Teixeira, S. (2018). On the visible-light photoelectrochemical activity of double-walled TiO2 nanotubes obtained by anodization in ionic liquids. In Abstracts. Warrendale: Materials Research Society - MRS. Recuperado de https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/nm03/nm03_05_27/nm03_05_01_28
NLM
Wender H, Gonçalves RV, Feil A, Migowski P, Dupont J, Teixeira S. On the visible-light photoelectrochemical activity of double-walled TiO2 nanotubes obtained by anodization in ionic liquids [Internet]. Abstracts. 2018 ;[citado 2024 nov. 11 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/nm03/nm03_05_27/nm03_05_01_28
Vancouver
Wender H, Gonçalves RV, Feil A, Migowski P, Dupont J, Teixeira S. On the visible-light photoelectrochemical activity of double-walled TiO2 nanotubes obtained by anodization in ionic liquids [Internet]. Abstracts. 2018 ;[citado 2024 nov. 11 ] Available from: https://www.mrs.org/technical-programs/programs_abstracts/2018_mrs_fall_meeting/nm03/nm03_05_27/nm03_05_01_28
Artigo de periodico
Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction (2018)
Dina, Gabriel; Kycia, Stefan; Gonzalez, Anal Gomez; Morelhao, Sergio Luiz
Source: MRS Advances. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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ABNT
DINA, Gabriel et al. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, v. 3, n. ju 2018, p. 2347-2352, 2018Tradução . . Disponível em: https://doi.org/10.1557/adv.2018.511. Acesso em: 11 nov. 2024.
APA
Dina, G., Kycia, S., Gonzalez, A. G., & Morelhao, S. L. (2018). Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction. MRS Advances, 3( ju 2018), 2347-2352. doi:10.1557/adv.2018.511
NLM
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1557/adv.2018.511
Vancouver
Dina G, Kycia S, Gonzalez AG, Morelhao SL. Micro grain analysis in plastically deformed silicon by 2nd-order X-ray diffraction [Internet]. MRS Advances. 2018 ; 3( ju 2018): 2347-2352.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1557/adv.2018.511
Artigo de periodico
Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' (2018)
Pavlov, V. V.; Pisarev, R. V.; Nefedov, S. G.; Akimov, I. A.; Yakovlev, D. R.; Bayer, M.; Rappl, P. H. O.; Abramof, E.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
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ABNT
PAVLOV, V. V. et al. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, v. 123, n. 19, p. 193102, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027473. Acesso em: 11 nov. 2024.
APA
Pavlov, V. V., Pisarev, R. V., Nefedov, S. G., Akimov, I. A., Yakovlev, D. R., Bayer, M., et al. (2018). Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, 123( 19), 193102. doi:10.1063/1.5027473
NLM
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5027473
Vancouver
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5027473
Artigo de periodico
Ultrafast light switching of ferromagnetism in 'EU''SE' (2018)
Henriques, André Bohomoletz; Gratens, Xavier Pierre Marie; Usachev, P. A.; China, V. A.; Springholz, G.; Henriques, André Bohomoletz
Source: Physical Review Letters. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
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ABNT
HENRIQUES, André Bohomoletz et al. Ultrafast light switching of ferromagnetism in 'EU''SE'. Physical Review Letters, v. 120, n. 21, p. 217203, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.120.217203. Acesso em: 11 nov. 2024.
APA
Henriques, A. B., Gratens, X. P. M., Usachev, P. A., China, V. A., Springholz, G., & Henriques, A. B. (2018). Ultrafast light switching of ferromagnetism in 'EU''SE'. Physical Review Letters, 120( 21), 217203. doi:10.1103/PhysRevLett.120.217203
NLM
Henriques AB, Gratens XPM, Usachev PA, China VA, Springholz G, Henriques AB. Ultrafast light switching of ferromagnetism in 'EU''SE' [Internet]. Physical Review Letters. 2018 ; 120( 21): 217203.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.120.217203
Vancouver
Henriques AB, Gratens XPM, Usachev PA, China VA, Springholz G, Henriques AB. Ultrafast light switching of ferromagnetism in 'EU''SE' [Internet]. Physical Review Letters. 2018 ; 120( 21): 217203.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.120.217203
Artigo de periodico
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K (2018)
Caparroz, Luís Felipe Vicentis; Agopian, Paula Ghedini Der ; Claeys, Cor ; Simoen, Eddy ; Bordallo, Caio Cesar Mendes ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidades: EP, EACH
Subjects: TEMPERATURA, SEMICONDUTORES
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ABNT
CAPARROZ, Luís Felipe Vicentis et al. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, v. 33, n. 6, p. 065003, 2018Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aabab3. Acesso em: 11 nov. 2024.
APA
Caparroz, L. F. V., Agopian, P. G. D., Claeys, C., Simoen, E., Bordallo, C. C. M., & Martino, J. A. (2018). Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. Semiconductor Science and Technology, 33( 6), 065003. doi:10.1088/1361-6641/aabab3
NLM
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Vancouver
Caparroz LFV, Agopian PGD, Claeys C, Simoen E, Bordallo CCM, Martino JA. Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K [Internet]. Semiconductor Science and Technology. 2018 ; 33( 6): 065003.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1088/1361-6641/aabab3
Trabalho de evento-resumo periodico
Weak localization magneto-conductivity in quantum wells with Rashba and Dresselhaus spin-orbit interaction: an analytic solution (2018)
Marinescu, Domnita; Weigele, Pirmin; Egues, José Carlos ; Zumbuhl, Dominik
Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC
Subjects: CONDUTIVIDADE ELÉTRICA, CAMPO MAGNÉTICO, POÇOS QUÂNTICOS, SPIN, SEMICONDUTORES
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ABNT
MARINESCU, Domnita et al. Weak localization magneto-conductivity in quantum wells with Rashba and Dresselhaus spin-orbit interaction: an analytic solution. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: http://meetings.aps.org/Meeting/MAR18/Session/S21.3. Acesso em: 11 nov. 2024. , 2018
APA
Marinescu, D., Weigele, P., Egues, J. C., & Zumbuhl, D. (2018). Weak localization magneto-conductivity in quantum wells with Rashba and Dresselhaus spin-orbit interaction: an analytic solution. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de http://meetings.aps.org/Meeting/MAR18/Session/S21.3
NLM
Marinescu D, Weigele P, Egues JC, Zumbuhl D. Weak localization magneto-conductivity in quantum wells with Rashba and Dresselhaus spin-orbit interaction: an analytic solution [Internet]. Bulletin of the American Physical Society. 2018 ;[citado 2024 nov. 11 ] Available from: http://meetings.aps.org/Meeting/MAR18/Session/S21.3
Vancouver
Marinescu D, Weigele P, Egues JC, Zumbuhl D. Weak localization magneto-conductivity in quantum wells with Rashba and Dresselhaus spin-orbit interaction: an analytic solution [Internet]. Bulletin of the American Physical Society. 2018 ;[citado 2024 nov. 11 ] Available from: http://meetings.aps.org/Meeting/MAR18/Session/S21.3
Artigo de periodico
The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
Bordallo, Caio Cesar Mendes ; Mocuta, Dan; Collaert, Nadine ; Alian, A; Simoen, Eddy ; Claeys, Cor ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Mols, Yannick; Van Dooren, A; Verhulst, Anne S; Lin, D
Source: Composants nanoélectroniques. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 11 nov. 2024.
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 11 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 nov. 11 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Artigo de periodico
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)
Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 11 nov. 2024.
APA
Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
NLM
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5027395
Vancouver
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/1.5027395
Artigo de periodico
Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots (2018)
Liang, Baolai; Yuan, Qing; Su, Linlin; Wang, Ying; Guo, Yingnan; Wang, Shufang; Fu, Guangsheng; Marega Junior, Euclydes ; Mazur, Yuriy I.; Ware, Morgan E.; Salamo, Gregory
Source: Optics Express. Unidade: IFSC
Subjects: ESTRUTURA DE SUPERFÍCIE, LASER, SEMICONDUTORES, FOTÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LIANG, Baolai et al. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. Optics Express, v. 26, n. 18, p. 23107-23118, 2018Tradução . . Disponível em: https://doi.org/10.1364/OE.26.023107. Acesso em: 11 nov. 2024.
APA
Liang, B., Yuan, Q., Su, L., Wang, Y., Guo, Y., Wang, S., et al. (2018). Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. Optics Express, 26( 18), 23107-23118. doi:10.1364/OE.26.023107
NLM
Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega Junior E, Mazur YI, Ware ME, Salamo G. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots [Internet]. Optics Express. 2018 ; 26( 18): 23107-23118.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1364/OE.26.023107
Vancouver
Liang B, Yuan Q, Su L, Wang Y, Guo Y, Wang S, Fu G, Marega Junior E, Mazur YI, Ware ME, Salamo G. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots [Internet]. Optics Express. 2018 ; 26( 18): 23107-23118.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1364/OE.26.023107
Artigo de periodico
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2018)
Morelhao, Sergio Luiz; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Source: Applied Physics Letters. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORELHAO, Sergio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, v. 112, n. 12, p. 101903, 2018Tradução . . Disponível em: https://aip.scitation.org/doi/10.1063/1.5020375. Acesso em: 11 nov. 2024.
APA
Morelhao, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2018). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, 112( 12), 101903. doi:10.1063/1.5020375
NLM
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2024 nov. 11 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375
Vancouver
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2024 nov. 11 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375

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