A physics-based analytical model for ballistic InSe nanotransistors (2024)
Source: Proceedings. Conference titles: International Conference on Nanotechnology (NANO). Unidade: EESC
Subjects: NANOTECNOLOGIA, ELETRÔNICA, ENGENHARIA ELÉTRICA
ABNT
SOUZA, Adelcio Marques de et al. A physics-based analytical model for ballistic InSe nanotransistors. 2024, Anais.. Picataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2024. Disponível em: https://dx.doi.org/10.1109/NANO61778.2024.10628708. Acesso em: 18 nov. 2024.APA
Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2024). A physics-based analytical model for ballistic InSe nanotransistors. In Proceedings. Picataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/NANO61778.2024.10628708NLM
Souza AM de, Celino DR, Ragi R, Romero MA. A physics-based analytical model for ballistic InSe nanotransistors [Internet]. Proceedings. 2024 ;[citado 2024 nov. 18 ] Available from: https://dx.doi.org/10.1109/NANO61778.2024.10628708Vancouver
Souza AM de, Celino DR, Ragi R, Romero MA. A physics-based analytical model for ballistic InSe nanotransistors [Internet]. Proceedings. 2024 ;[citado 2024 nov. 18 ] Available from: https://dx.doi.org/10.1109/NANO61778.2024.10628708