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Artigo de periodico
High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction (2024)
Alzeidan, Ahmad ; Cantalice, Tiago Fernandes de ; Sautter, K E; Vallejo, K D; Simmonds, P J; Quivy, Alain André
Fonte: Sensors and Actuators A: Physical. Unidade: IF
Assunto: FOTODETECTORES
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ALZEIDAN, Ahmad et al. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, v. 374, 2024Tradução . . Acesso em: 01 out. 2024.
APA
Alzeidan, A., Cantalice, T. F. de, Sautter, K. E., Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2024). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, 374. doi:10.1016/j.sna.2024.115464
NLM
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 out. 01 ]
Vancouver
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 out. 01 ]
Artigo de periodico
Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors (2022)
Alzeidan, A.; Cantalice, T. F.; Vallejo, K. D.; Gajjela, R. S. R.; Hendriks, A. L.; Simmonds, P. J.; Koenraad, P. M.; Quivy, Alain André
Fonte: Sensors and Actuators A: Physical. Unidade: IF
Assuntos: FÍSICA MODERNA, NANOTECNOLOGIA, MICROSCOPIA DE FORÇA ATÔMICA, RADIAÇÃO INFRAVERMELHA, FOTODETECTORES
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ALZEIDAN, A. et al. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, v. 334, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2021.113357. Acesso em: 01 out. 2024.
APA
Alzeidan, A., Cantalice, T. F., Vallejo, K. D., Gajjela, R. S. R., Hendriks, A. L., Simmonds, P. J., et al. (2022). Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors. Sensors and Actuators A: Physical, 334. doi:10.1016/j.sna.2021.113357
NLM
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Vancouver
Alzeidan A, Cantalice TF, Vallejo KD, Gajjela RSR, Hendriks AL, Simmonds PJ, Koenraad PM, Quivy AA. Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2022 ; 334[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2021.113357
Artigo de periodico
A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry (2021)
Malafronte, A. A.; Petri, A. R.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Maidana, Nora Lía ; Mangiarotti, A. ; Martins, Marcos ; Quivy, Alain André ; Vanin, Vito
Fonte: Radiation Physics and Chemistry. Unidades: IF, IPEN
Assuntos: FOTODETECTORES, SEMICONDUTORES, DIODOS, ESPECTROSCOPIA DE RAIO GAMA, ESPECTROSCOPIA DE RAIO X, SILÍCIO
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MALAFRONTE, A. A. et al. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, v. 179, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109103. Acesso em: 01 out. 2024.
APA
Malafronte, A. A., Petri, A. R., Gonçalves, J. A. C., Barros, S., Bueno, C., Maidana, N. L., et al. (2021). A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry. Radiation Physics and Chemistry, 179. doi:10.1016/j.radphyschem.2020.109103
NLM
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Vancouver
Malafronte AA, Petri AR, Gonçalves JAC, Barros S, Bueno C, Maidana NL, Mangiarotti A, Martins M, Quivy AA, Vanin V. A low-cost small-size commercial PIN photodiode: I. Electrical characterisation and low-energy photon spectrometry [Internet]. Radiation Physics and Chemistry. 2021 ; 179[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109103
Artigo de periodico
A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations (2021)
Mangiarotti, A. ; Petri, A. R.; Malafronte, A. A.; Gonçalves, J. A. C.; Barros, Suelen ; Bueno, Carmen ; Fernández-Varea, José M. ; Maidana, Nora Lía ; Martins, Marcos ; Vanin, Vito
Fonte: Radiation Physics and Chemistry. Unidades: IF, IPEN
Assuntos: FÍSICA DE PARTÍCULAS, FOTODETECTORES, SEMICONDUTORES (FÍSICO-QUÍMICA), DIODOS, SILÍCIO, SIMULAÇÃO (ESTATÍSTICA)
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MANGIAROTTI, A. et al. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations. Radiation Physics and Chemistry, v. 182, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.radphyschem.2020.109102. Acesso em: 01 out. 2024.
APA
Mangiarotti, A., Petri, A. R., Malafronte, A. A., Gonçalves, J. A. C., Barros, S., Bueno, C., et al. (2021). A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations. Radiation Physics and Chemistry, 182. doi:10.1016/j.radphyschem.2020.109102
NLM
Mangiarotti A, Petri AR, Malafronte AA, Gonçalves JAC, Barros S, Bueno C, Fernández-Varea JM, Maidana NL, Martins M, Vanin V. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations [Internet]. Radiation Physics and Chemistry. 2021 ; 182[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109102
Vancouver
Mangiarotti A, Petri AR, Malafronte AA, Gonçalves JAC, Barros S, Bueno C, Fernández-Varea JM, Maidana NL, Martins M, Vanin V. A low-cost small-size commercial PIN photodiode: II. Comparison of measurements with monoenergetic electrons to analytical expressions and Monte Carlo simulations [Internet]. Radiation Physics and Chemistry. 2021 ; 182[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.radphyschem.2020.109102
Artigo de periodico
Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer (2020)
Santos, Tiago G.; Vieira, Gustavo S.; Delfino, Cristian A.; Tanaka, Roberto Y.; Abe, Nancy M.; Passaro, Angelo; Fernandes, Fernando M.; Quivy, Alain A.
Fonte: Sensors and Actuators A: Physical. Unidade: IF
Assuntos: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTIVIDADE, FÍSICA MODERNA, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, POÇOS QUÂNTICOS
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SANTOS, Tiago G. et al. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, v. 301, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2019.111725. Acesso em: 01 out. 2024.
APA
Santos, T. G., Vieira, G. S., Delfino, C. A., Tanaka, R. Y., Abe, N. M., Passaro, A., et al. (2020). Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, 301. doi:10.1016/j.sna.2019.111725
NLM
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2019.111725
Vancouver
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2019.111725
Artigo de periodico
Partial contributions to the valence band of MO2, RuO2, and Rh2O3: Cooper minimum and extended cluster model calculations (2020)
Stoeberl, V.; Guedes, E. B.; Abud, Fábio Santos Alves ; Jardim, Renato ; Abbate, M.; Mossanek, Rodrigo
Fonte: EPL (Europhysics Letters). Unidade: IF
Assuntos: FÍSICA DA MATÉRIA CONDENSADA, ESPECTROSCOPIA DE RAIO X, FOTODETECTORES, ESTRUTURA ELETRÔNICA
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STOEBERL, V. et al. Partial contributions to the valence band of MO2, RuO2, and Rh2O3: Cooper minimum and extended cluster model calculations. EPL (Europhysics Letters), v. 132, n. 4, 2020Tradução . . Disponível em: https://doi.org/10.1209/0295-5075/132/47004. Acesso em: 01 out. 2024.
APA
Stoeberl, V., Guedes, E. B., Abud, F. S. A., Jardim, R., Abbate, M., & Mossanek, R. (2020). Partial contributions to the valence band of MO2, RuO2, and Rh2O3: Cooper minimum and extended cluster model calculations. EPL (Europhysics Letters), 132( 4). doi:10.1209/0295-5075/132/47004
NLM
Stoeberl V, Guedes EB, Abud FSA, Jardim R, Abbate M, Mossanek R. Partial contributions to the valence band of MO2, RuO2, and Rh2O3: Cooper minimum and extended cluster model calculations [Internet]. EPL (Europhysics Letters). 2020 ; 132( 4):[citado 2024 out. 01 ] Available from: https://doi.org/10.1209/0295-5075/132/47004
Vancouver
Stoeberl V, Guedes EB, Abud FSA, Jardim R, Abbate M, Mossanek R. Partial contributions to the valence band of MO2, RuO2, and Rh2O3: Cooper minimum and extended cluster model calculations [Internet]. EPL (Europhysics Letters). 2020 ; 132( 4):[citado 2024 out. 01 ] Available from: https://doi.org/10.1209/0295-5075/132/47004
Artigo de periodico
Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors (2020)
Claro, M. S.; Stroppa, D. G.; Silva, Euzi Conceição Fernandes da ; Quivy, Alain André
Fonte: Sensors and Actuators A: Physical. Unidade: IF
Assuntos: FÍSICA MODERNA, EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, SEMICONDUTIVIDADE
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CLARO, M. S. et al. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, v. 315, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2020.112262. Acesso em: 01 out. 2024.
APA
Claro, M. S., Stroppa, D. G., Silva, E. C. F. da, & Quivy, A. A. (2020). Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, 315. doi:10.1016/j.sna.2020.112262
NLM
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Vancouver
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Artigo de periodico
High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction (2019)
Alzeidan, Ahmad; Claro, M S; Quivy, Alain André
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
ALZEIDAN, Ahmad e CLARO, M S e QUIVY, Alain André. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, v. 126, p. 224506(6), 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5125238. Acesso em: 01 out. 2024.
APA
Alzeidan, A., Claro, M. S., & Quivy, A. A. (2019). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Journal of Applied Physics, 126, 224506(6). doi:10.1063/1.5125238
NLM
Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.5125238
Vancouver
Alzeidan A, Claro MS, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction [Internet]. Journal of Applied Physics. 2019 ; 126 224506(6).[citado 2024 out. 01 ] Available from: https://doi.org/10.1063/1.5125238
Trabalho de evento-anais periodico
Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy (2019)
Santos, Thales Borrely dos; Quivy, Alain André
Fonte: IEEE. Nome do evento: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Assuntos: EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES
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ABNT
SANTOS, Thales Borrely dos e QUIVY, Alain André. Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919412. Acesso em: 01 out. 2024. , 2019
APA
Santos, T. B. dos, & Quivy, A. A. (2019). Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919412
NLM
Santos TB dos, Quivy AA. Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy [Internet]. IEEE. 2019 ;04.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919412
Vancouver
Santos TB dos, Quivy AA. Realistic Simulations and Design of GaAs Solar Cells produced by Molecular Beam Epitaxy [Internet]. IEEE. 2019 ;04.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919412
Trabalho de evento-anais periodico
Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves (2019)
Lima, Marcelo D. de; Santos, Thales Borrely dos; Quivy, Alain André
Fonte: IEEE. Nome do evento: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Assuntos: SIMULAÇÃO DE SISTEMAS, FOTODETECTORES
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ABNT
LIMA, Marcelo D. de e SANTOS, Thales Borrely dos e QUIVY, Alain André. Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919450. Acesso em: 01 out. 2024. , 2019
APA
Lima, M. D. de, Santos, T. B. dos, & Quivy, A. A. (2019). Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919450
NLM
Lima MD de, Santos TB dos, Quivy AA. Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves [Internet]. IEEE. 2019 ;03.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919450
Vancouver
Lima MD de, Santos TB dos, Quivy AA. Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves [Internet]. IEEE. 2019 ;03.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919450
Trabalho de evento-anais periodico
Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector (2019)
Al Zeidan, Ahmad ; Cantalice, Tiago F. de; Garcia, Ailton J.; Deneke, Christoph F.; Quivy, Alain André
Fonte: IEEE. Nome do evento: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF
Assuntos: FÍSICO-QUÍMICA, FOTODETECTORES, EPITAXIA POR FEIXE MOLECULAR, ELETRÔNICA QUÂNTICA, FILMES FINOS, SEMICONDUTIVIDADE
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ABNT
AL ZEIDAN, Ahmad et al. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. Disponível em: https://doi.org/10.1109/SBMicro.2019.8919349. Acesso em: 01 out. 2024. , 2019
APA
Al Zeidan, A., Cantalice, T. F. de, Garcia, A. J., Deneke, C. F., & Quivy, A. A. (2019). Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector. IEEE. New York: IEEE-Institute of Electrical and Electronics Engineers. doi:10.1109/SBMicro.2019.8919349
NLM
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349
Vancouver
Al Zeidan A, Cantalice TF de, Garcia AJ, Deneke CF, Quivy AA. Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector [Internet]. IEEE. 2019 ;04.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/SBMicro.2019.8919349
Artigo de periodico
Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy (2017)
Pedroso, D. M.; Santos, T. G.; Delfino, C. A.; Vieira, G. S.; Fernandes, F. M.; Passaro, A.; Quivy, Alain André
Fonte: Journal of Materials Science. Unidade: IF
Assuntos: FOTODETECTORES, TRANSISTORES
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ABNT
PEDROSO, D. M. et al. Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy. Journal of Materials Science, v. 52, n. 9, p. 5223-5231, 2017Tradução . . Disponível em: https://doi.org/10.1007/s10853-017-0763-9. Acesso em: 01 out. 2024.
APA
Pedroso, D. M., Santos, T. G., Delfino, C. A., Vieira, G. S., Fernandes, F. M., Passaro, A., & Quivy, A. A. (2017). Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy. Journal of Materials Science, 52( 9), 5223-5231. doi:10.1007/s10853-017-0763-9
NLM
Pedroso DM, Santos TG, Delfino CA, Vieira GS, Fernandes FM, Passaro A, Quivy AA. Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy [Internet]. Journal of Materials Science. 2017 ; 52( 9): 5223-5231.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10853-017-0763-9
Vancouver
Pedroso DM, Santos TG, Delfino CA, Vieira GS, Fernandes FM, Passaro A, Quivy AA. Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy [Internet]. Journal of Materials Science. 2017 ; 52( 9): 5223-5231.[citado 2024 out. 01 ] Available from: https://doi.org/10.1007/s10853-017-0763-9
Artigo de periodico
Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells (2017)
Aquino, V M de; Iwamoto, H; Dias, I F L; Laureto, E; Silva, M A T da; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Fonte: Superlattices and Microstructures. Unidade: IF
Assuntos: POÇOS QUÂNTICOS, FOTODETECTORES, ELETRÔNICA QUÂNTICA
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ABNT
AQUINO, V M de et al. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, v. 101, n. ja, p. 236-243, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.11.042. Acesso em: 01 out. 2024.
APA
Aquino, V. M. de, Iwamoto, H., Dias, I. F. L., Laureto, E., Silva, M. A. T. da, Silva, E. C. F. da, & Quivy, A. A. (2017). Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells. Superlattices and Microstructures, 101( ja), 236-243. doi:10.1016/j.spmi.2016.11.042
NLM
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Vancouver
Aquino VM de, Iwamoto H, Dias IFL, Laureto E, Silva MAT da, Silva ECF da, Quivy AA. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells [Internet]. Superlattices and Microstructures. 2017 ; 101( ja): 236-243.[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.spmi.2016.11.042
Artigo de periodico
Simulation of the dark current of quantum-well infrared photodetectors (2017)
Claro, M. S.; Fernandes, F. M.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Fonte: Superlattices and Microstructures. Unidade: IF
Assuntos: FOTODETECTORES, SEMICONDUTORES
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ABNT
CLARO, M. S. et al. Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, v. 104, p. 232-239, 2017Tradução . . Disponível em: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub. Acesso em: 01 out. 2024.
APA
Claro, M. S., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2017). Simulation of the dark current of quantum-well infrared photodetectors. Superlattices and Microstructures, 104, 232-239. doi:10.1016/j.spmi.2017.02.015
NLM
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 out. 01 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Vancouver
Claro MS, Fernandes FM, Silva ECF da, Quivy AA. Simulation of the dark current of quantum-well infrared photodetectors [Internet]. Superlattices and Microstructures. 2017 ; 104 232-239.[citado 2024 out. 01 ] Available from: http://www.sciencedirect.com/science/article/pii/S0749603617300745?via*3Dihub
Artigo de periodico
Indium Oxynitride (InNO) Radiation Sensors Calibration (2017)
Sparvoli, Marina; Onmori, Roberto Koji ; Jorge, Fábio de Oliveira Moraes; Gazziro, Mario Alexandre
Fonte: IEEE Sensors Journal. Unidades: EP, IF
Assuntos: AEROSSOL, ÓPTICA ELETRÔNICA, FOTODETECTORES, FÍSICA ATMOSFÉRICA
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ABNT
SPARVOLI, Marina et al. Indium Oxynitride (InNO) Radiation Sensors Calibration. IEEE Sensors Journal, v. 17, n. 8, p. 2372 - 2376, 2017Tradução . . Disponível em: https://doi.org/10.1109/JSEN.2017.2670080. Acesso em: 01 out. 2024.
APA
Sparvoli, M., Onmori, R. K., Jorge, F. de O. M., & Gazziro, M. A. (2017). Indium Oxynitride (InNO) Radiation Sensors Calibration. IEEE Sensors Journal, 17( 8), 2372 - 2376. doi:10.1109/JSEN.2017.2670080
NLM
Sparvoli M, Onmori RK, Jorge F de OM, Gazziro MA. Indium Oxynitride (InNO) Radiation Sensors Calibration [Internet]. IEEE Sensors Journal. 2017 ; 17( 8): 2372 - 2376.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/JSEN.2017.2670080
Vancouver
Sparvoli M, Onmori RK, Jorge F de OM, Gazziro MA. Indium Oxynitride (InNO) Radiation Sensors Calibration [Internet]. IEEE Sensors Journal. 2017 ; 17( 8): 2372 - 2376.[citado 2024 out. 01 ] Available from: https://doi.org/10.1109/JSEN.2017.2670080
Trabalho de evento
Optical microsystem in silicon with CMOS photodiodes, optical filters and microlenses (2016)
Assagra, Yuri Andrey Olivato; Granado, Talita Conte; Celino, Daniel Ricardo; Correia, J. H.; Carmo, João Paulo Pereira do
Fonte: Proceedings. Nome do evento: Seminário Anual de Automática, Electrónica Industrial e Instrumentación. Unidade: EESC
Assuntos: SENSORES ÓPTICOS, ESPECTROSCOPIA, FOTODETECTORES, ENGENHARIA ELÉTRICA
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ABNT
ASSAGRA, Yuri Andrey Olivato et al. Optical microsystem in silicon with CMOS photodiodes, optical filters and microlenses. 2016, Anais.. Elche, Spain: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2016. Disponível em: https://repositorio.usp.br/directbitstream/40327252-8a8b-4cdd-a0f4-1552804272d1/OK___trabalho%2011%20%28Seminario%20Anual%20de%20Autom%C3%A1tica%2C%20Electr%C3%B3nica%20Industrial%20e%20Instrumentaci%C3%B3n%202016%29.pdf. Acesso em: 01 out. 2024.
APA
Assagra, Y. A. O., Granado, T. C., Celino, D. R., Correia, J. H., & Carmo, J. P. P. do. (2016). Optical microsystem in silicon with CMOS photodiodes, optical filters and microlenses. In Proceedings. Elche, Spain: Escola de Engenharia de São Carlos, Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/40327252-8a8b-4cdd-a0f4-1552804272d1/OK___trabalho%2011%20%28Seminario%20Anual%20de%20Autom%C3%A1tica%2C%20Electr%C3%B3nica%20Industrial%20e%20Instrumentaci%C3%B3n%202016%29.pdf
NLM
Assagra YAO, Granado TC, Celino DR, Correia JH, Carmo JPP do. Optical microsystem in silicon with CMOS photodiodes, optical filters and microlenses [Internet]. Proceedings. 2016 ;[citado 2024 out. 01 ] Available from: https://repositorio.usp.br/directbitstream/40327252-8a8b-4cdd-a0f4-1552804272d1/OK___trabalho%2011%20%28Seminario%20Anual%20de%20Autom%C3%A1tica%2C%20Electr%C3%B3nica%20Industrial%20e%20Instrumentaci%C3%B3n%202016%29.pdf
Vancouver
Assagra YAO, Granado TC, Celino DR, Correia JH, Carmo JPP do. Optical microsystem in silicon with CMOS photodiodes, optical filters and microlenses [Internet]. Proceedings. 2016 ;[citado 2024 out. 01 ] Available from: https://repositorio.usp.br/directbitstream/40327252-8a8b-4cdd-a0f4-1552804272d1/OK___trabalho%2011%20%28Seminario%20Anual%20de%20Autom%C3%A1tica%2C%20Electr%C3%B3nica%20Industrial%20e%20Instrumentaci%C3%B3n%202016%29.pdf
Artigo de periodico
Computation of dark current in QWIPs using a modelling based on ehrenfest theorem (2015)
Pedroso, D. M.; Passaro, A.; Dacal, L. C. O.; Vieira, G. S.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Fonte: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Assuntos: FOTODETECTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEDROSO, D. M. et al. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 48, n. 36, p. se 2015, 2015Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/48/36/365102. Acesso em: 01 out. 2024.
APA
Pedroso, D. M., Passaro, A., Dacal, L. C. O., Vieira, G. S., Silva, E. C. F. da, & Quivy, A. A. (2015). Computation of dark current in QWIPs using a modelling based on ehrenfest theorem. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 48( 36), se 2015. doi:10.1088/0022-3727/48/36/365102
NLM
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2024 out. 01 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Vancouver
Pedroso DM, Passaro A, Dacal LCO, Vieira GS, Silva ECF da, Quivy AA. Computation of dark current in QWIPs using a modelling based on ehrenfest theorem [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2015 ; 48( 36): se 2015.[citado 2024 out. 01 ] Available from: https://doi.org/10.1088/0022-3727/48/36/365102
Artigo de periodico
A low-cost flexible-platform (LCFP) for characterization of photodetectors (2015)
Gomes, José Miguel; Correia, José Higino Gomes; Carmo, João Paulo Pereira do
Fonte: Measurement. Unidade: EESC
Assuntos: SENSORES ÓPTICOS, FOTODETECTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOMES, José Miguel e CORREIA, José Higino Gomes e CARMO, João Paulo Pereira do. A low-cost flexible-platform (LCFP) for characterization of photodetectors. Measurement, v. 61, p. 206-215, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.measurement.2014.10.042. Acesso em: 01 out. 2024.
APA
Gomes, J. M., Correia, J. H. G., & Carmo, J. P. P. do. (2015). A low-cost flexible-platform (LCFP) for characterization of photodetectors. Measurement, 61, 206-215. doi:10.1016/j.measurement.2014.10.042
NLM
Gomes JM, Correia JHG, Carmo JPP do. A low-cost flexible-platform (LCFP) for characterization of photodetectors [Internet]. Measurement. 2015 ; 61 206-215.[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.measurement.2014.10.042
Vancouver
Gomes JM, Correia JHG, Carmo JPP do. A low-cost flexible-platform (LCFP) for characterization of photodetectors [Internet]. Measurement. 2015 ; 61 206-215.[citado 2024 out. 01 ] Available from: https://doi.org/10.1016/j.measurement.2014.10.042
Artigo de periodico
Modeling noise in superlattice quantum-well infrared photodetectors (2014)
Fernandes, Fernando Massa; Claro, Marcel Santos; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre
Fonte: JOURNAL OF PHYSICS D: APPLIED PHYSICS. Unidade: IF
Assuntos: FOTODETECTORES, CAMPO ELETROMAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDES, Fernando Massa et al. Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 47, n. 38, p. 385105, 2014Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/47/38/385105. Acesso em: 01 out. 2024.
APA
Fernandes, F. M., Claro, M. S., Silva, E. C. F. da, & Quivy, A. A. (2014). Modeling noise in superlattice quantum-well infrared photodetectors. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 47( 38), 385105. doi:10.1088/0022-3727/47/38/385105
NLM
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2024 out. 01 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Vancouver
Fernandes FM, Claro MS, Silva ECF da, Quivy AA. Modeling noise in superlattice quantum-well infrared photodetectors [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2014 ; 47( 38): 385105.[citado 2024 out. 01 ] Available from: https://doi.org/10.1088/0022-3727/47/38/385105
Artigo de periodico
Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation (2013)
Maia, Álvaro Diego Bernardino; Aquino, V. M. de; Dias, I. F. L.; Silva, Euzi Conceição Fernandes da; Quivy, Alain Andre; Bindilatti, Valdir
Fonte: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Assuntos: FOTODETECTORES, ÁTOMOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 01 out. 2024.
APA
Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
NLM
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 out. 01 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf
Vancouver
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2024 out. 01 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf

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