ReP USP - Resultado da busca

Trabalho de evento
Electrical transport mechanisms in mono-layer phthalocyanine device (2008)
Raimundo, Daniel Scodeler; Stelet, Adriana Barboza; Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAIMUNDO, Daniel Scodeler et al. Electrical transport mechanisms in mono-layer phthalocyanine device. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956078. Acesso em: 04 nov. 2025.
APA
Raimundo, D. S., Stelet, A. B., Huanca, D. R., & Salcedo, W. J. (2008). Electrical transport mechanisms in mono-layer phthalocyanine device. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956078
NLM
Raimundo DS, Stelet AB, Huanca DR, Salcedo WJ. Electrical transport mechanisms in mono-layer phthalocyanine device [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1149/1.2956078
Vancouver
Raimundo DS, Stelet AB, Huanca DR, Salcedo WJ. Electrical transport mechanisms in mono-layer phthalocyanine device [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1149/1.2956078
Trabalho de evento
Thermal oxide passivation by corona charges (2008)
Ramos, Carlos Alberto Santos; Sanchez, Manuel Cid; Onmori, Roberto Koji ; Stem, Nair
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RAMOS, Carlos Alberto Santos et al. Thermal oxide passivation by corona charges. 2008, Anais.. Pennington: The Electrochemical Society, 2008. Disponível em: https://doi.org/10.1149/1.2956071. Acesso em: 04 nov. 2025.
APA
Ramos, C. A. S., Sanchez, M. C., Onmori, R. K., & Stem, N. (2008). Thermal oxide passivation by corona charges. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. doi:10.1149/1.2956071
NLM
Ramos CAS, Sanchez MC, Onmori RK, Stem N. Thermal oxide passivation by corona charges [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1149/1.2956071
Vancouver
Ramos CAS, Sanchez MC, Onmori RK, Stem N. Thermal oxide passivation by corona charges [Internet]. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1149/1.2956071
Trabalho de evento
Diffractive optical elements based in brand glass (2008)
Sparvoli, Marina; Mansano, Ronaldo Domingues ; Chubaci, José Fernando Diniz
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SPARVOLI, Marina e MANSANO, Ronaldo Domingues e CHUBACI, José Fernando Diniz. Diffractive optical elements based in brand glass. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 04 nov. 2025.
APA
Sparvoli, M., Mansano, R. D., & Chubaci, J. F. D. (2008). Diffractive optical elements based in brand glass. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Sparvoli M, Mansano RD, Chubaci JFD. Diffractive optical elements based in brand glass. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ]
Vancouver
Sparvoli M, Mansano RD, Chubaci JFD. Diffractive optical elements based in brand glass. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 04 ]
Monografia/livro-ed/org
Microelectronics Technology and Devices SBMicro 2003 (2003)
Martino, João Antonio (Editor) ; Pavanello, Marcelo Antonio (Editor) ; Morimoto, Nilton Itiro (Editor)
Fonte: SBMicro proceedings. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
Microelectronics Technology and Devices SBMicro 2003. SBMicro proceedings. Pennington: Electrochemical Society. . Acesso em: 04 nov. 2025. , 2003
APA
Microelectronics Technology and Devices SBMicro 2003. (2003). Microelectronics Technology and Devices SBMicro 2003. SBMicro proceedings. Pennington: Electrochemical Society.
NLM
Microelectronics Technology and Devices SBMicro 2003. SBMicro proceedings. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Microelectronics Technology and Devices SBMicro 2003. SBMicro proceedings. 2003 ;[citado 2025 nov. 04 ]
Parte de monografia/livro
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures (2002)
Páez Carreño, Marcelo Nelson ; Lopes, Alexandre Tavares; Alayo Chávez, Marco Isaías ; Pereyra, Inés
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PÁEZ CARREÑO, Marcelo Nelson et al. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 04 nov. 2025.
APA
Páez Carreño, M. N., Lopes, A. T., Alayo Chávez, M. I., & Pereyra, I. (2002). 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 04 ]
Vancouver
Páez Carreño MN, Lopes AT, Alayo Chávez MI, Pereyra I. 3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 04 ]

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