Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures (1998)
Fonte: Physics of Low-Dimensional Structures. Nome do evento: International Conference on Superlattices, Microstructures and Microdevices. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
ABNT
ZANELATTO, G et al. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 09 nov. 2025. , 1998APA
Zanelatto, G., Pusep, Y. A., Galzerani, J. C., González-Borrero, P. P., Lubyshev, D., & Basmaji, P. (1998). Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. Moscou: Instituto de Física de São Carlos, Universidade de São Paulo.NLM
Zanelatto G, Pusep YA, Galzerani JC, González-Borrero PP, Lubyshev D, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. 1998 ;1/2 237-242.[citado 2025 nov. 09 ]Vancouver
Zanelatto G, Pusep YA, Galzerani JC, González-Borrero PP, Lubyshev D, Basmaji P. Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures. Physics of Low-Dimensional Structures. 1998 ;1/2 237-242.[citado 2025 nov. 09 ]
