Defects in si thin-film transistors studies by spin-dependent transport (1996)
Fonte: Abstracts. Nome do evento: International Conference on Solid State Devices and Materials. Unidade: FFCLRP
Assunto: FÍSICA
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ABNT
KAWACHI, G et al. Defects in si thin-film transistors studies by spin-dependent transport. 1996, Anais.. Yokohama: Japan Society of Applied Physics, 1996. . Acesso em: 08 nov. 2025.APA
Kawachi, G., Graeff, C. F. O., Brandt, M. S., & Stutzmann, M. (1996). Defects in si thin-film transistors studies by spin-dependent transport. In Abstracts. Yokohama: Japan Society of Applied Physics.NLM
Kawachi G, Graeff CFO, Brandt MS, Stutzmann M. Defects in si thin-film transistors studies by spin-dependent transport. Abstracts. 1996 ;[citado 2025 nov. 08 ]Vancouver
Kawachi G, Graeff CFO, Brandt MS, Stutzmann M. Defects in si thin-film transistors studies by spin-dependent transport. Abstracts. 1996 ;[citado 2025 nov. 08 ]
