Filtros : "Journal of Applied Physics" "IFSC" Removidos: "Bartkowiak, Wojciech" "IF-FEP" "Financiamento FINEP" Limpar

Filtros



Refine with date range


  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 31 out. 2024.
    • APA

      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0187962
    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0187962
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA, CÁLCULO DE PROBABILIDADE

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      VALENTE, Gustavo Targino e GUIMARÃES, Francisco Eduardo Gontijo. Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, v. 136, n. 8, p. 084501-1-084501-8, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0218020. Acesso em: 31 out. 2024.
    • APA

      Valente, G. T., & Guimarães, F. E. G. (2024). Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, 136( 8), 084501-1-084501-8. doi:10.1063/5.0218020
    • NLM

      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0218020
    • Vancouver

      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0218020
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 31 out. 2024.
    • APA

      Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
    • NLM

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0137926
    • Vancouver

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0137926
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SANTOS, Jéssica Fabiana Mariano dos et al. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, v. 128, n. 11, p. 113103-1-113103-8, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0020655. Acesso em: 31 out. 2024.
    • APA

      Santos, J. F. M. dos, Zanuto, V. S., Kesavulu, C. R., Venkataia, G., Jayasankar, C. K., Nunes, L. A. de O., & Catunda, T. (2020). Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses. Journal of Applied Physics, 128( 11), 113103-1-113103-8. doi:10.1063/5.0020655
    • NLM

      Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0020655
    • Vancouver

      Santos JFM dos, Zanuto VS, Kesavulu CR, Venkataia G, Jayasankar CK, Nunes LA de O, Catunda T. Photothermal and spectroscopic characterization of Tb3+-doped tungsten-zirconium-tellurite glasses [Internet]. Journal of Applied Physics. 2020 ; 128( 11): 113103-1-113103-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/5.0020655
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 31 out. 2024.
    • APA

      Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
    • NLM

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5085493
    • Vancouver

      Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5085493
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      OCHOA, Diego A. et al. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5067243. Acesso em: 31 out. 2024.
    • APA

      Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. -C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
    • NLM

      Ochoa DA, Casals JA, Venet M, M'Peko J-C, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5067243
    • Vancouver

      Ochoa DA, Casals JA, Venet M, M'Peko J-C, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5067243
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SANTA-ROSA, Washington et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, v. 125, n. 7, p. 075107-1-075107-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5063320. Acesso em: 31 out. 2024.
    • APA

      Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. -C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
    • NLM

      Santa-Rosa W, Silva Jr. PS da, M'Peko J-C, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5063320
    • Vancouver

      Santa-Rosa W, Silva Jr. PS da, M'Peko J-C, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5063320
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LUMINESCÊNCIA, EMISSÃO DA LUZ, FILMES FINOS, ÓPTICA NÃO LINEAR

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      PEREIRA, Alessandra et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, v. 126, n. 16, p. 165501-1-165501-9, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5099014. Acesso em: 31 out. 2024.
    • APA

      Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Legnani, C., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
    • NLM

      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5099014
    • Vancouver

      Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5099014
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      BASTOS, Carlos M. O. et al. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, v. 123, n. 6, p. 065702-1-065702-13, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018325. Acesso em: 31 out. 2024.
    • APA

      Bastos, C. M. O., Sabino, F. P., Sipahi, G. M., & Silva, J. L. F. da. (2018). A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory. Journal of Applied Physics, 123( 6), 065702-1-065702-13. doi:10.1063/1.5018325
    • NLM

      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5018325
    • Vancouver

      Bastos CMO, Sabino FP, Sipahi GM, Silva JLF da. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory [Internet]. Journal of Applied Physics. 2018 ; 123( 6): 065702-1-065702-13.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5018325
  • Source: Journal of Applied Physics. Unidades: IFSC, IQSC

    Subjects: ÓPTICA, FÍSICA TEÓRICA

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SABINO, Fernando P. et al. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, v. 123, n. 5, p. 055704-1-055704-9, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5018056. Acesso em: 31 out. 2024.
    • APA

      Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2018). Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12. Journal of Applied Physics, 123( 5), 055704-1-055704-9. doi:10.1063/1.5018056
    • NLM

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5018056
    • Vancouver

      Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12 [Internet]. Journal of Applied Physics. 2018 ; 123( 5): 055704-1-055704-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5018056
  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: POLÍMEROS (MATERIAIS), FILMES FINOS, CÉLULAS SOLARES

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      BRENES-BADILLA, D. et al. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, v. 123, n. 15, p. 155502-1-155502-7, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5017672. Acesso em: 31 out. 2024.
    • APA

      Brenes-Badilla, D., Coutinho, D. J., Amorim, D. R. B., Faria, R. M., & Salvadori, M. C. B. da S. (2018). Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, 123( 15), 155502-1-155502-7. doi:10.1063/1.5017672
    • NLM

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5017672
    • Vancouver

      Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5017672
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: NEOPLASIAS (TRATAMENTO), CARCINOMA BASOCELULAR

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      STRINGASCI, Mirian Denise et al. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, v. 124, n. 4, p. 044701-1-044701-8, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5036640. Acesso em: 31 out. 2024.
    • APA

      Stringasci, M. D., Salvio, A. G., Sbrissa Neto, D., Vollet-Filho, J. D., Bagnato, V. S., & Kurachi, C. (2018). Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, 124( 4), 044701-1-044701-8. doi:10.1063/1.5036640
    • NLM

      Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5036640
    • Vancouver

      Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5036640
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 31 out. 2024.
    • APA

      Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
    • NLM

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5027395
    • Vancouver

      Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.5027395
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 31 out. 2024.
    • APA

      Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
    • NLM

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4942854
    • Vancouver

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4942854
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 31 out. 2024.
    • APA

      Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
    • NLM

      Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4954161
    • Vancouver

      Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4954161
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, MATÉRIA CONDENSADA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      ZANATTA, Antonio Ricardo. An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, v. 119, n. 14, p. 145302-1-145302-5, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4945677. Acesso em: 31 out. 2024.
    • APA

      Zanatta, A. R. (2016). An alternative experimental approach to produce rare-earth-doped SiOx films. Journal of Applied Physics, 119( 14), 145302-1-145302-5. doi:10.1063/1.4945677
    • NLM

      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4945677
    • Vancouver

      Zanatta AR. An alternative experimental approach to produce rare-earth-doped SiOx films [Internet]. Journal of Applied Physics. 2016 ; 119( 14): 145302-1-145302-5.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4945677
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, ENERGIA, ALUMÍNIO

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SANTOS, J. F. M. et al. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, v. 117, n. 5, p. 053102-1-053102-8, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4906781. Acesso em: 31 out. 2024.
    • APA

      Santos, J. F. M., Terra, I. A. A., Astrath, N. G. C., Guimarães, F. B., Baesso, M. L., Nunes, L. A. de O., & Catunda, T. (2015). Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses. Journal of Applied Physics, 117( 5), 053102-1-053102-8. doi:10.1063/1.4906781
    • NLM

      Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4906781
    • Vancouver

      Santos JFM, Terra IAA, Astrath NGC, Guimarães FB, Baesso ML, Nunes LA de O, Catunda T. Mechanisms of optical losses in the 5D4 and 5D3 levels in Tb3+ doped low silica calcium aluminosilicate glasses [Internet]. Journal of Applied Physics. 2015 ; 117( 5): 053102-1-053102-8.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4906781
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 31 out. 2024.
    • APA

      Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
    • NLM

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4918544
    • Vancouver

      Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4918544
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 31 out. 2024.
    • APA

      Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
    • NLM

      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4921809
    • Vancouver

      Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4921809
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SILÍCIO, ALUMÍNIO, FILMES FINOS (COMPOSIÇÃO;ESTRUTURA;PROPRIEDADES)

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      ZANATTA, Antonio Ricardo e KORDESCH, M. E. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, v. 116, n. 7, p. 073511-1-073511-7, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4893654. Acesso em: 31 out. 2024.
    • APA

      Zanatta, A. R., & Kordesch, M. E. (2014). On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon. Journal of Applied Physics, 116( 7), 073511-1-073511-7. doi:10.1063/1.4893654
    • NLM

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4893654
    • Vancouver

      Zanatta AR, Kordesch ME. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon [Internet]. Journal of Applied Physics. 2014 ; 116( 7): 073511-1-073511-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1063/1.4893654

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2024