ReP USP - Resultado da busca

Artigo de periodico
Electrochemical evidence of strong electronic interaction of PtRu on carbon nanotubes with high density of defects (2008)
Moraes, Inês Rabelo de; Matsubara, Elaine Yoshiko; Rosolen, José Maurício
Fonte: Electrochemical and Solid State Letters. Unidade: FFCLRP
Assuntos: FÍSICO-QUÍMICA, NANOTECNOLOGIA
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ABNT
MORAES, Inês Rabelo de e MATSUBARA, Elaine Yoshiko e ROSOLEN, José Maurício. Electrochemical evidence of strong electronic interaction of PtRu on carbon nanotubes with high density of defects. Electrochemical and Solid State Letters, v. 11, n. 12, p. K109-K112, 2008Tradução . . Acesso em: 27 nov. 2025.
APA
Moraes, I. R. de, Matsubara, E. Y., & Rosolen, J. M. (2008). Electrochemical evidence of strong electronic interaction of PtRu on carbon nanotubes with high density of defects. Electrochemical and Solid State Letters, 11( 12), K109-K112.
NLM
Moraes IR de, Matsubara EY, Rosolen JM. Electrochemical evidence of strong electronic interaction of PtRu on carbon nanotubes with high density of defects. Electrochemical and Solid State Letters. 2008 ; 11( 12): K109-K112.[citado 2025 nov. 27 ]
Vancouver
Moraes IR de, Matsubara EY, Rosolen JM. Electrochemical evidence of strong electronic interaction of PtRu on carbon nanotubes with high density of defects. Electrochemical and Solid State Letters. 2008 ; 11( 12): K109-K112.[citado 2025 nov. 27 ]
Artigo de periodico
Characterization by coulometric reduction of surface chemical components formed on copper in fluorine-containing plasmas (2003)
Vilca Meléndez, Hugo Antonio; Ruas, Ronaldo; Verdonck, Patrick Bernard; Aoki, Idalina Vieira
Fonte: Electrochemical and Solid State Letters. Unidade: EP
Assuntos: COBRE, CORROSÃO ATMOSFÉRICA, CORROSÃO DOS MATERIAIS, ELETROQUÍMICA, INIBIDORES DE CORROSÃO, METAIS (CONSERVAÇÃO), MICROSCOPIA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VILCA MELÉNDEZ, Hugo Antonio et al. Characterization by coulometric reduction of surface chemical components formed on copper in fluorine-containing plasmas. Electrochemical and Solid State Letters, v. 6, n. 12, p. B55-B58, 2003Tradução . . Acesso em: 27 nov. 2025.
APA
Vilca Meléndez, H. A., Ruas, R., Verdonck, P. B., & Aoki, I. V. (2003). Characterization by coulometric reduction of surface chemical components formed on copper in fluorine-containing plasmas. Electrochemical and Solid State Letters, 6( 12), B55-B58.
NLM
Vilca Meléndez HA, Ruas R, Verdonck PB, Aoki IV. Characterization by coulometric reduction of surface chemical components formed on copper in fluorine-containing plasmas. Electrochemical and Solid State Letters. 2003 ; 6( 12): B55-B58.[citado 2025 nov. 27 ]
Vancouver
Vilca Meléndez HA, Ruas R, Verdonck PB, Aoki IV. Characterization by coulometric reduction of surface chemical components formed on copper in fluorine-containing plasmas. Electrochemical and Solid State Letters. 2003 ; 6( 12): B55-B58.[citado 2025 nov. 27 ]
Artigo de periodico
Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures (1999)
Bellodi, Marcello; Martino, João Antonio
Fonte: Electrochemical and Solid State Letters. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, v. 2, n. 7, p. 345-346, 1999Tradução . . Disponível em: https://doi.org/10.1149/1.1390831. Acesso em: 27 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (1999). Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures. Electrochemical and Solid State Letters, 2( 7), 345-346. doi:10.1149/1.1390831
NLM
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1149/1.1390831
Vancouver
Bellodi M, Martino JA. Leakage drain current behavior in an accumulation mode SOI p-channel MOSFET operating at high temperatures [Internet]. Electrochemical and Solid State Letters. 1999 ; 2( 7): 345-346.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1149/1.1390831

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