p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant (2002)
Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Assunto: SEMICONDUTORES
ABNT
LAMAS, T. E. e QUIVY, A. A. p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 28 mar. 2024.APA
Lamas, T. E., & Quivy, A. A. (2002). p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant. In Resumos. São Paulo: SBF.NLM
Lamas TE, Quivy AA. p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant. Resumos. 2002 ;[citado 2024 mar. 28 ]Vancouver
Lamas TE, Quivy AA. p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant. Resumos. 2002 ;[citado 2024 mar. 28 ]