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Filtros : "Tokranov, V E" Limpar

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  • Artigo de periodico

    Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces (2001)

    Martini, S.; Quivy, A. A.; Ugarte, D; Lange, C; Richter, W; Tokranov, V E

    Source: Journal of Crystal Growth. Unidade: IF

    Subjects: FOTOLUMINESCÊNCIA, MICROSCOPIA ELETRÔNICA DE VARREDURA

    PrivadoAcesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      MARTINI, S. et al. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, v. 227, p. 46-50, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)00630-3. Acesso em: 05 out. 2024.

    • APA

      Martini, S., Quivy, A. A., Ugarte, D., Lange, C., Richter, W., & Tokranov, V. E. (2001). Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces. Journal of Crystal Growth, 227, 46-50. doi:10.1016/s0022-0248(01)00630-3

    • NLM

      Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3

    • Vancouver

      Martini S, Quivy AA, Ugarte D, Lange C, Richter W, Tokranov VE. Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces [Internet]. Journal of Crystal Growth. 2001 ; 227 46-50.[citado 2024 out. 05 ] Available from: https://doi.org/10.1016/s0022-0248(01)00630-3

  • Trabalho de evento-resumo

    Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy (2000)

    Martini, S.; Quivy, A. A.; Leite, J. R.; Lange, C; Richter, W; Tokranov, V E

    Source: Resumos. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MARTINI, S. et al. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 05 out. 2024.

    • APA

      Martini, S., Quivy, A. A., Leite, J. R., Lange, C., Richter, W., & Tokranov, V. E. (2000). Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. In Resumos. São Paulo: SBF.

    • NLM

      Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2024 out. 05 ]

    • Vancouver

      Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2024 out. 05 ]
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