Cirne, Karin Huscher; Silveira, M A G; Santos, R B B; Gimenez, S P; Seixas jr, L E; Melo, W R de; Lima, J A de; Barbosa, M D L; Medina, N. H.; Added, N. 
; Tabacniks, Manfredo Harri
Source: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Unidade: IF
Subjects: RADIAÇÃO IONIZANTE, SEMICONDUTORES
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CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 80-82, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.044. Acesso em: 10 nov. 2024.APA
Cirne, K. H., Silveira, M. A. G., Santos, R. B. B., Gimenez, S. P., Seixas jr, L. E., Melo, W. R. de, et al. (2012). Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 80-82. doi:10.1016/j.nimb.2011.07.044NLM
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044Vancouver
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2024 nov. 10 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044
